ZHCSQ75C June   2022  – March 2023 UCC28C50-Q1 , UCC28C51-Q1 , UCC28C52-Q1 , UCC28C53-Q1 , UCC28C54-Q1 , UCC28C55-Q1 , UCC28C56H-Q1 , UCC28C56L-Q1 , UCC28C57H-Q1 , UCC28C57L-Q1 , UCC28C58-Q1 , UCC28C59-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Detailed Pin Description
        1. 8.3.1.1 COMP
        2. 8.3.1.2 FB
        3. 8.3.1.3 CS
        4. 8.3.1.4 RT/CT
        5. 8.3.1.5 GND
        6. 8.3.1.6 OUT
        7. 8.3.1.7 VDD
        8. 8.3.1.8 VREF
      2. 8.3.2  Undervoltage Lockout
      3. 8.3.3  ±1% Internal Reference Voltage
      4. 8.3.4  Current Sense and Overcurrent Limit
      5. 8.3.5  Reduced-Discharge Current Variation
      6. 8.3.6  Oscillator Synchronization
      7. 8.3.7  Soft Start
      8. 8.3.8  Enable and Disable
      9. 8.3.9  Slope Compensation
      10. 8.3.10 Voltage Mode
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 UVLO Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Primary-to-Secondary Turns Ratio of the Flyback Transformer (NPS)
        2. 9.2.2.2  Primary Magnetizing Inductance of the Flyback Transformer (LM)
        3. 9.2.2.3  Number of Turns of the Flyback Transformer Windings
        4. 9.2.2.4  Current Sense Resistors (R24, R25) and Current Limiting
        5. 9.2.2.5  Primary Clamp Circuit (D7, D1, D3, R2, R28) to Limit Voltage Stress
        6. 9.2.2.6  Primary-Side Current Stress and Input Capacitor Selection
        7. 9.2.2.7  Secondary-Side Current Stress and Output Capacitor Selection
        8. 9.2.2.8  VDD Capacitors (C12, C18)
        9. 9.2.2.9  Gate Drive Network (R14, R16, Q6)
        10. 9.2.2.10 VREF Capacitor (C18)
        11. 9.2.2.11 RT/CT Components (R12, C15)
        12. 9.2.2.12 HV Start-Up Circuitry for VDD (Q1, Q2, D2, D4, D6, D8, R5)
        13. 9.2.2.13 Desensitization to CS-pin Noise by RC Filtering, Leading-Edge Blanking, and Slope Compensation
        14. 9.2.2.14 Voltage Feedback Compensation
          1. 9.2.2.14.1 Power Stage Gain, Poles, and Zeroes
          2. 9.2.2.14.2 Compensation Components
          3. 9.2.2.14.3 Bode Plots and Stability Margins
          4. 9.2.2.14.4 Stability Measurements
      3. 9.2.3 Application Curves
    3. 9.3 PCB Layout Recommendations
      1. 9.3.1 PCB Layout Routing Examples
    4. 9.4 Power Supply Recommendations
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Related Links
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 静电放电警告
    7. 10.7 术语表
  11. 11Mechanical, Packaging, and Orderable Information

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Overview

The UCC28C5x-Q1 series of control integrated circuits provide the features necessary to implement AC-DC or DCto-DC fixed-frequency current-mode control schemes with a minimum number of external components. Protection circuitry includes undervoltage lockout (UVLO) and current limiting. Internally implemented circuits include a start-up current of less than 75 µA, a precision reference trimmed for accuracy at the error amplifier input, logic to ensure latched operation, a pulse-width modulation (PWM) comparator that also provides current-limit control, and an output stage designed to source or sink high-peak current. The output stage, suitable for driving N-channel MOSFETs, is low when it is in the OFF state. The oscillator contains a trimmed discharge current that enables accurate programming of the maximum duty cycle and dead time limit, making this device suitable for high-speed applications.

Major differences between members of this series are the UVLO thresholds, acceptable ambient temperature range, and maximum duty cycle and frequency. Typical UVLO thresholds of 14.5 V (ON) and 9 V (OFF) on the UCC28C52-Q1 and UCC28C54-Q1 devices make them ideally suited to off-line AC-DC applications. The corresponding typical thresholds for the UCC28C53-Q1 and UCC28C55-Q1 devices are 8.4-V (ON) and 7.6-V (OFF), making them ideal for use with regulated input voltages used in DC-DC applications. The UCC28C50-Q1 and UCC28C51-Q1 feature a start-up threshold of 7 V and a turnoff threshold of 6.6 V (OFF), which makes them suitable for battery- powered applications. The UCC28C56H/L-Q1, UCC28C57H/L-Q1, UCC28C58-Q1 and UCC28C59-Q1 operate with higher start-up thresholds for them suitably to work with SiC MOSFETs which often being used in high-voltage and high-power traction inverter applications. The UCC28C56H-Q1 and UCC28C57H-Q1 are with a start-up threshold 18.8-V (ON) and 15.5-V (OFF). The UCC28C56L-Q1 and UCC28C57L-Q1 are with a start-up threshold 18.8-V (ON) and 14.5-V (OFF). The UCC28C58-Q1 and UCC28C59-Q1 are with a start-up threshold 16-V (ON) and 12.5-V (OFF). The UCC28C50-Q1, UCC28C52-Q1, UCC28C53-Q1, UCC28C56H/L-Q1 and UCC28C58-Q1 devices operate to duty cycles approaching 100%. The UCC28C51-Q1, UCC28C54-Q1, UCC28C55-Q1, UCC28C57H/L-Q1 and UCC28C59-Q1 obtain a duty cycle from 0% to 50% by the addition of an internal toggle flip-flop, which blanks the output off every other clock cycle. The UCC28C5x series is specified for operation from –40°C to 125°C. The switching frequency (fSW) of the UCC28C50-Q1, UCC28C52-Q1, UCC28C53-Q1, UCC28C56H/L-Q1 and UCC28C58-Q1 gate drive is equal to fOSC; the switching frequency of the UCC28C51-Q1, UCC28C54-Q1, UCC28C55-Q1, UCC28C57H/L-Q1 and UCC28C59-Q1 is equal to half of the fOSC.

The UCC28C5x-Q1 series are an enhanced replacement with pin-to-pin compatibility to the BiCMOS UCC28C4x- Q1 families. The new series offers improved performance when compared to older bipolar devices and other competitive BiCMOS devices with similar functionality. These improvements generally consist of tighter specification limits that are a subset of the older product ratings, maintaining drop-in capability. In new designs, these improvements can reduce the component count or enhance circuit performance when compared to the previously available devices.