SEB and SEGR data was collected at temperatures from 20 to 60°C, full load (18 A), P_VIN = V_IN = 7 V (maximum recommended voltage), and V_OUT ≈ 1 V at LET_EFF of 66.37to 75.82 MeV·cm²mg. The device was tested under Enabled and Disabled Modes. The discrete power resistive load of 55 mΩ, was present at all times, even during the disabled testing. The load was connected to help identify if an momentary upset enabled the device. During the disabled testing not a single unit was damaged, or an increment on current observed. It has been shown that SEB/SEGR sensitivity decrements with higher temperatures and for that reason runs 59, 61, 63, and 69 the devices were cooled down by using a vortex tube aimed at the die.

The device was exposed to Praseodymium (¹⁴¹Pr) and Holmium (¹⁶⁵Ho) ions. For ¹⁴¹Pr angles of incidence of 0° and 27.3° were used for an LET_EFF of 66.37 and 74.95 MeV·cm²/mg, respectively. ¹⁶⁵Ho at angle of incidence of 0° was used for an LET_EFF of 75.82 MeV·cm²/mg. For Praseodymium the air distance between the heavy-ion exit port and the DUT was set to 40-mm. In the case of Holmium the distance was set to 30-mm. Flux of ≈10⁵ ions/cm²·s and fluence of ≥ 10⁷ ions/cm² per run were used for the SEB/SEGR characterization. Run duration to achieve this fluence was approximately 2 minutes. Test conditions and results are summarized in Table 7-4.

The TPS7H4001-SP is DSEE free when operated withing the DSEE-free (green) area under the SOA curve presented in Figure 7-1. For more details on the DSEE cross section refer to Section 7.1.