1 Introduction

The TPS7H60X3-SP is a radiation-hardness-assured (RHA) Gallium Nitride (GaN) Field Effect Transistor (FET) gate driver designed for high frequency, high efficiency applications. The driver features:

Absolute Maximum Voltage ratings
- TPS7H6003-SP: 200V
- TPS7H6013-SP: 60V
- TPS7H6023-SP: 22V
Adjustable dead time (PWM mode)
Approximately 30ns propagation delay
Approximately 5.5ns high-side and low-side matching
High-side and low-side 5V LDOs independent of supply voltage
Two control input modes: Independent Input Mode (IIM) and PWM
- IIM allows for outputs to be controlled by dedicated input
- PWM allows for two complementary outputs signals to be generated from single input with resistor programmable dead-time

In IIM mode the user also has the ability to enable or disable the turn-on of both outputs when both inputs are on simultaneously (interlock protection). This gives the driver the ability to be used in multiple converter configurations.

The device is offered in a 48-pin ceramic package. General device information and test conditions are listed in Table 1-1. For more detailed technical specifications, user guides, and application notes, see the TPS7H6003-SP, the TPS7H6013-SP, or the TPS7H6023-SP product pages.

Table 1-1 Overview Information

Description⁽¹⁾	Device Information
TI part number	TPS7H6003-SP, TPS7H6013-SP, TPS7H6023-SP
Orderable number	5962R2220101VXC, 5962R2220102VXC, 5962R2220103VXC
Device function	200, 60, or 22V half-bridge eGaN gate driver
Technology	LBC7 (Linear BiCMOS 7)
Exposure facility	Radiation Effects Facility, Cyclotron Institute, Texas A&M University (15 MeV / nucleon)
Heavy ion fluence per run	9.97 × 10⁶ – 1 × 10⁷ ions / cm²
Irradiation temperature	25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing)

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