10 Summary

The purpose of this study was to characterize the effect of heavy-ion irradiation on the single-event effect (SEE) performance of the TPS7H6003-SP 200V half-bridge eGaN gate driver. Heavy-ions with LET_EFF = 48 to 75MeV × cm² / mg were used for the SEE characterization campaign. Flux of approximately 10⁵ ions / cm² × s and fluences of approximately 10⁷ ions / cm² per run were used for the characterization. The SEE results demonstrated that the TPS7H60x3-SP is free of destructive SEL and SEB LET_EFF = 75MeV × cm² / mg and across the full electrical specifications. Transients at LET_EFF = 48 to 75MeV × cm² / mg on V_OUT are presented and discussed. CREME96-based worst week event-rate calculations for LEO(ISS) and GEO orbits for the DSEE and SET are presented for reference.