The TPS7H6003-SP, TPS7H6013-SP and TPS7H6023-SP share the same silicon, thus the TPS7H6003-SP test results are applicable to the other two devices.The TPS7H6003-SP has a strong degree of hardness to neutron irradiation up to fluence level 1 × 10¹³n/cm2. The measurements taken post-irradiation for each sample set showed a marginal shift for most parameters at each fluence level. The parameters that showed a greater degree of change between pre- and post- irradiation were still within the electrical performance characteristics specified in the Table 3-1.

The results show that all devices were fully functional and within specification limits. A sample size of nine units was exposed for neutron irradiation and an additional unirradiated control unit was used as correlation.

Electrical testing is done for pre- and post- neutron irradiation by ATE electrical test is done at an ambient room temperature of 25°C. Parameters not listed in Table 3-1 are omitted either because there is no parametric data or because verification was done through bench testing.

See Appendix A for NDD test results.