The TPS7H6003-SP is a 200V radiation-hardness-assured, TPS7H6013-SP is a 60V radiation-hardness-assured, and TPS7H6023-SP is a 22V radiation-hardness-assured half-bridge gate driver for GaN FETs for space applications. Thisfamily of drivers feature adjustable dead time capability, small 30-ns propagation delay and 5.5ns high-side and low-side matching. These parts also includes internal high-side and low-side LDOs that make sure that a drive voltage of 5V regardless of supply voltage. All three devices are offeredin a ceramic 48-HBX (CFP) MCM package.