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SNOK006 April 2024 TPS7H6013-SP

1.2 Device Details

Testing was performed per MIL-STD-883, Test Method 1019, with a sample size per MIL-PRF-38535, Appendix C, test condition A (high dose rate).

Table 1-1 Device and Exposure Details

RHA TID Details: Up to 100 krad(Si)
TI Part Number	TPS7H6013-SP
Orderable Number	5962R2220102VXC
Device function	Half Bridge Gate Driver
Die Name	RTPS7H6003A0VM
Package	48-pin CFP (HBX)
Technology	LBC7 (250nm Linear BiCMOS)
Quantity tested	HDR : Three biased and three unbiased units at 10krad(Si) levels Three biased and three unbiased units at 50krad(Si) levels Five biased and five unbiased units at 100krad(Si) levels One correlation unit
Lot Accept/Reject	Passes 100 krad(Si), no observed fails
HDR radiation facility	Texas Instruments CLAB Dallas, Texas
Die Lot Number and Assembly Lot Number	2349610TI1-18 / 4000351MTT
HDR Dose Rate	186.7 rad(Si) / s
HDR Radiation Source	Gammacell 220 Excel (GC-220E) Co-60
Irradiation and Test Temperature	Ambient, room temperature controlled to 25°C ±6°C per MIL-STD-883 and MIL-STD-750

Figure 1-1 TPS7H6013-SP Device Used in Exposure