ZHCS155C March 2011 – November 2023 TPS40170
PRODUCTION DATA
Power device selection is important for proper switching operation. If the low-side MOSFET has low gate capacitance CGS (if CGS<CGD), there is a risk of short-through induced by high dv/dt at switching node (See reference[1]) during high-side turned-on. If this happens, add a small capacitance between LDRV and GND. See design example.