ZHCSF55E June   2016  – December 2021 UCC21520

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 说明（续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety-Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Propagation Delay and Pulse Width Distortion
    2. 8.2 Rising and Falling Time
    3. 8.3 Input and Disable Response Time
    4. 8.4 Programable Dead Time
    5. 8.5 Power-up UVLO Delay to OUTPUT
    6. 8.6 CMTI Testing
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 VDD, VCCI, and Undervoltage Lock Out (UVLO)
      2. 9.3.2 Input and Output Logic Table
      3. 9.3.3 Input Stage
      4. 9.3.4 Output Stage
      5. 9.3.5 Diode Structure in the UCC21520 and the UCC21520A
    4. 9.4 Device Functional Modes
      1. 9.4.1 Disable Pin
      2. 9.4.2 Programmable Dead-Time (DT) Pin
        1. 9.4.2.1 Tying the DT Pin to VCC
        2. 9.4.2.2 DT Pin Connected to a Programming Resistor between DT and GND Pins
        3. 9.4.2.3 41
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Designing INA/INB Input Filter
        2. 10.2.2.2 Select External Bootstrap Diode and its Series Resistor
        3. 10.2.2.3 Gate Driver Output Resistor
        4. 10.2.2.4 Gate to Source Resistor Selection
        5. 10.2.2.5 Estimate Gate Driver Power Loss
        6. 10.2.2.6 Estimating Junction Temperature
        7. 10.2.2.7 Selecting VCCI, VDDA/B Capacitor
          1. 10.2.2.7.1 Selecting a VCCI Capacitor
          2. 10.2.2.7.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 10.2.2.7.3 Select a VDDB Capacitor
        8. 10.2.2.8 Dead Time Setting Guidelines
        9. 10.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Certifications
    4. 13.4 Receiving Notification of Documentation Updates
    5. 13.5 支持资源
    6. 13.6 Trademarks
    7. 13.7 Electrostatic Discharge Caution
    8. 13.8 术语表
  14. 14Mechanical, Packaging, and Orderable Information

7.9 Electrical Characteristics

VVCCI = 3.3 V or 5 V, 0.1-µF capacitor from VCCI to GND, VVDDA = VVDDB = 12 V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, TA = –40°C to +125°C, (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENTS
IVCCI VCCI quiescent current VINA = 0 V, VINB = 0 V 1.5 2.0 mA
IVDDA,
IVDDB		 VDDA and VDDB quiescent current VINA = 0 V, VINB = 0 V 1.0 1.8 mA
IVCCI VCCI operating current (f = 500 kHz) current per channel, COUT = 100 pF 2.0 mA
IVDDA,
IVDDB		 VDDA and VDDB operating current (f = 500 kHz) current per channel, COUT = 100 pF 2.5 mA
VCCI UVLO THRESHOLDS
VVCCI_ON Rising threshold 2.55 2.7 2.85 V
VVCCI_OFF Falling threshold VCCI_OFF 2.35 2.5 2.65 V
VVCCI_HYS Threshold hysteresis 0.2 V
UCC21520ADW VDD UVLO THRESHOLDS (5-V UVLO Version)
VVDDA_ON,
VVDDB_ON		 Rising threshold VDDA_ON, VDDB_ON 5.7 6.0 6.3 V
VVDDA_OFF,
VVDDB_OFF		 Falling threshold VDDA_OFF, VDDB_OFF 5.4 5.7 6 V
VVDDA_HYS,
VVDDB_HYS		 Threshold hysteresis 0.3 V
UCC21520DW VDD UVLO THRESHOLDS (8-V UVLO Version)
VVDDA_ON,
VVDDB_ON		 Rising threshold VDDA_ON, VDDB_ON 8.3 8.7 9.2 V
VVDDA_OFF,
VVDDB_OFF		 Falling threshold VDDA_OFF, VDDB_OFF 7.8 8.2 8.7 V
VVDDA_HYS,
VVDDB_HYS		 Threshold hysteresis 0.5 V
INA, INB AND DISABLE
VINAH, VINBH, VDISH Input high voltage 1.6 1.8 2 V
VINAL, VINBL, VDISL Input low voltage 0.8 1 1.2 V
VINA_HYS, VINB_HYS, VDIS_HYS Input hysteresis 0.8 V
VINA, VINB Negative transient, ref to GND, 50 ns pulse Not production tested, bench test only –5 V
OUTPUT
IOA+, IOB+ Peak output source current CVDD = 10 µF, CLOAD = 0.18 µF, f = 1 kHz, bench measurement 4 A
IOA-, IOB- Peak output sink current CVDD = 10 µF, CLOAD = 0.18 µF, f = 1 kHz, bench measurement 6 A
ROHA, ROHB Output resistance at high state IOUT = –10 mA, TA = 25°C, ROHA, ROHBdo not represent drive pull-up performance. See tRISE in Section 7.10 and Section 9.3.4 for details. 5 Ω
ROLA, ROLB Output resistance at low state IOUT = 10 mA, TA = 25°C 0.55 Ω
VOHA, VOHB Output voltage at high state VVDDA, VVDDB = 12 V, IOUT = –10 mA, TA = 25°C 11.95 V
VOLA, VOLB Output voltage at low state VVDDA, VVDDB = 12 V, IOUT = 10 mA, TA = 25°C 5.5 mV
DEADTIME AND OVERLAP PROGRAMMING
Dead time Pull DT pin to VCCI Overlap determined by INA INB -
DT pin is left open, min spec characterized only, tested for outliers 0 8 15 ns
RDT = 20 kΩ 160 200 240 ns
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