ZHCSF55E June   2016  – December 2021 UCC21520

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 说明（续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety-Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Propagation Delay and Pulse Width Distortion
    2. 8.2 Rising and Falling Time
    3. 8.3 Input and Disable Response Time
    4. 8.4 Programable Dead Time
    5. 8.5 Power-up UVLO Delay to OUTPUT
    6. 8.6 CMTI Testing
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 VDD, VCCI, and Undervoltage Lock Out (UVLO)
      2. 9.3.2 Input and Output Logic Table
      3. 9.3.3 Input Stage
      4. 9.3.4 Output Stage
      5. 9.3.5 Diode Structure in the UCC21520 and the UCC21520A
    4. 9.4 Device Functional Modes
      1. 9.4.1 Disable Pin
      2. 9.4.2 Programmable Dead-Time (DT) Pin
        1. 9.4.2.1 Tying the DT Pin to VCC
        2. 9.4.2.2 DT Pin Connected to a Programming Resistor between DT and GND Pins
        3. 9.4.2.3 41
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Designing INA/INB Input Filter
        2. 10.2.2.2 Select External Bootstrap Diode and its Series Resistor
        3. 10.2.2.3 Gate Driver Output Resistor
        4. 10.2.2.4 Gate to Source Resistor Selection
        5. 10.2.2.5 Estimate Gate Driver Power Loss
        6. 10.2.2.6 Estimating Junction Temperature
        7. 10.2.2.7 Selecting VCCI, VDDA/B Capacitor
          1. 10.2.2.7.1 Selecting a VCCI Capacitor
          2. 10.2.2.7.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 10.2.2.7.3 Select a VDDB Capacitor
        8. 10.2.2.8 Dead Time Setting Guidelines
        9. 10.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Certifications
    4. 13.4 Receiving Notification of Documentation Updates
    5. 13.5 支持资源
    6. 13.6 Trademarks
    7. 13.7 Electrostatic Discharge Caution
    8. 13.8 术语表
  14. 14Mechanical, Packaging, and Orderable Information

7.10 Switching Characteristics

VVCCI = 3.3 V or 5 V, 0.1-µF capacitor from VCCI to GND, VVDDA = VVDDB = 12 V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, TA = –40°C to +125°C, (unless otherwise noted).
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
tRISEOutput rise time, 20% to 80% measured pointsCOUT = 1.8 nF 616ns
tFALLOutput fall time, 90% to 10% measured pointsCOUT = 1.8 nF712ns
tPWminMinimum pulse widthOutput off for less than minimum, COUT = 0 pF20ns
tPDHLPropagation delay from INx to OUTx falling edges141930ns
tPDLHPropagation delay from INx to OUTx rising edges141930ns
tPWDPulse width distortion |tPDLH – tPDHL|6ns
tDMPropagation delays matching between VOUTA, VOUTBf = 100 kHz5ns
tVDD+ to OUTVDDA, VDDB Power-up Delay Time: UVLO Rise to OUTA, OUTB. See Figure 8-6INA or INB tied to VCCI50100us
|CMH|High-level common-mode transient immunityINA and INB both are tied to VCCI; VCM=1500V; (See Section 8.6)100V/ns
|CML|Low-level common-mode transient immunityINA and INB both are tied to GND; VCM=1500V; (See Section 8.6)100
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