4 修订历史记录
Changes from C Revision (November 2016) to D Revision
- Added "keep total REFOUT capacitance below 0.47 μF" in Pin Functions table Go
Changes from B Revision (September 2016) to C Revision
- Added 通篇添加了对 DDR3L DRAM 技术的引用Go
- Added DDR3L test conditions to Output DC voltage, VO and REFOUT specificationGo
- Added Figure 4Go
- Added Figure 9Go
- Updated Figure 16 to include DDR3L dataGo
Changes from A Revision (September 2015) to B Revision
- Changed " –10 mA < IREFOUT < 10 mA" to "–1 mA < IREFOUT < 1 mA" in all test conditions for the REFOUT voltage tolerance to VREFIN specificationGo
- Changed all MIN and MAX values from "15" to "12" for all test conditions for the REFOUT voltage tolerance to VREFIN specificationGo
- Updated Figure 19Go
- Added REFOUT (VREF) Consideration for DDR2 Applications sectionGo
- Updated Figure 28 and Table 3Go
- Added clarity to Layout Guidelines section.Go
Changes from * Revision (February 2008) to A Revision
- Added 添加了引脚配置和功能 部分、ESD 额定值 表、特性 说明 部分、器件功能模式、应用和实施 部分、电源相关建议 部分、布局 部分、器件和文档支持 部分以及机械、封装和可订购信息 部分Go
- Changed “PowerPAD” references to “thermal pad” throughoutGo
- Deleted Dissipation Ratings table Go