9 Revision History
Changes from Revision U (January 2015) to Revision V (September 2024)
- 更新了整个文档中的表格、图和交叉参考的编号格式Go
- 向文档中添加了 M3 器件并添加了 M3 新器件热性能信息 表Go
- Changed max output currentGo
- Changed VFB typical valueGo
- Added M3 new silicon current limitGo
- Added new silicon plots to Typical Characteristics
sectionGo
- Changed Output current value from 500 mA to 400
mA in Design Parameters (Fixed-Voltage Version)
tableGo
- Changed Detailed Design Procedure section: Changed dropout
voltage value from 0.5 A to 0.4 A, changed maximum dropout voltage
from an estimation to 200 mV
Go
- Added new silicon plots to Application Curves
sectionGo
- Added Layout Example for the DBV Package Adjustable Version
through Layout Example for the DCQ Package Fixed Version figures to
Layout Examples sectionGo
- Added M3 information to Device Nomenclature
sectionGo
Changes from Revision T (August 2010) to Revision U (January 2015)
- 添加了 ESD 等级 表、特性说明 部分、器件功能模式、应用和实施 部分、电源相关建议 部分、布局 部分、器件和文档支持 部分以及机械、封装和可订购信息 部分Go