9 Revision History
Changes from Revision P (December 2015) to Revision Q (September 2024)
- 更新了整个文档中的表格、图和交叉参考的编号格式Go
- 通篇将 SON 更改为 VSON
Go
- Changed VFB typical valueGo
- Added M3 ground pin current specGo
- Added M3 shutdown current specGo
- Added new silicon plots to Typical
Characteristics
Go
- Changed load current max source from 500mA to 250mA
and dropout voltage from 250mV to 150mV in Overview
sectionGo
- Changed total ESR drops below 50nΩF to total ESR drops
below 50nF × Ω in Input and Output Capacitor Requirements
sectionGo
- Added new silicon plots to Application Curves
sectionGo
- Changed Layout Guidelines
sectionGo
- Added DBV and DCQ layout figures to Layout Examples
sectionGo
- Added M3 information to Device
Nomenclature
Go
Changes from Revision O (August 2010) to Revision P (December 2015)
- 更改了有关 NMOS 拓扑的特性 要点;删除了“新”字样Go
- 添加了 ESD 等级 表、特性说明 部分、器件功能模式、应用和实施 部分、电源相关建议 部分、布局 部分、器件和文档支持 部分以及机械、封装和可订购信息 部分Go
- 更改了说明 部分的第一段;删除了 NMOS 拓扑说明中的“新”字样Go
- Changed Pin Configuration and Functions section; updated table
format Go