Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 24 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Vos (offset voltage at 25°C) (max) (mV) 0.25 Offset drift (typ) (µV/°C) 0.1 Input bias current (max) (pA) 600 GBW (typ) (MHz) 0.75 Features Cost Optimized, EMI Hardened, High Cload Drive, Small Size, Zero Drift Slew rate (typ) (V/µs) 0.35 Rail-to-rail In, Out Iq per channel (typ) (mA) 0.09 Vn at 1 kHz (typ) (nV√Hz) 38 CMRR (typ) (dB) 134 Rating Catalog Operating temperature range (°C) -40 to 125 Iout (typ) (A) 0.02 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.2 Input common mode headroom (to positive supply) (typ) (V) 0.2 Output swing headroom (to negative supply) (typ) (V) 0.06 Output swing headroom (to positive supply) (typ) (V) -0.06
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 24 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Vos (offset voltage at 25°C) (max) (mV) 0.25 Offset drift (typ) (µV/°C) 0.1 Input bias current (max) (pA) 600 GBW (typ) (MHz) 0.75 Features Cost Optimized, EMI Hardened, High Cload Drive, Small Size, Zero Drift Slew rate (typ) (V/µs) 0.35 Rail-to-rail In, Out Iq per channel (typ) (mA) 0.09 Vn at 1 kHz (typ) (nV√Hz) 38 CMRR (typ) (dB) 134 Rating Catalog Operating temperature range (°C) -40 to 125 Iout (typ) (A) 0.02 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.2 Input common mode headroom (to positive supply) (typ) (V) 0.2 Output swing headroom (to negative supply) (typ) (V) 0.06 Output swing headroom (to positive supply) (typ) (V) -0.06