Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.5 Vos (offset voltage at 25°C) (max) (mV) 0.008 Offset drift (typ) (µV/°C) 0.005 Input bias current (max) (pA) 500 GBW (typ) (MHz) 10 Features EMI Hardened, High Cload Drive, Zero Crossover, Zero Drift Slew rate (typ) (V/µs) 5 Rail-to-rail In, Out Iq per channel (typ) (mA) 1.7 Vn at 1 kHz (typ) (nV√Hz) 7 CMRR (typ) (dB) 110 Rating Catalog Operating temperature range (°C) -40 to 125 Iout (typ) (A) 0.06 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.1 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 0.01 Output swing headroom (to positive supply) (typ) (V) -0.005 THD + N at 1 kHz (typ) (%) 0.0005
Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.5 Vos (offset voltage at 25°C) (max) (mV) 0.008 Offset drift (typ) (µV/°C) 0.005 Input bias current (max) (pA) 500 GBW (typ) (MHz) 10 Features EMI Hardened, High Cload Drive, Zero Crossover, Zero Drift Slew rate (typ) (V/µs) 5 Rail-to-rail In, Out Iq per channel (typ) (mA) 1.7 Vn at 1 kHz (typ) (nV√Hz) 7 CMRR (typ) (dB) 110 Rating Catalog Operating temperature range (°C) -40 to 125 Iout (typ) (A) 0.06 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.1 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 0.01 Output swing headroom (to positive supply) (typ) (V) -0.005 THD + N at 1 kHz (typ) (%) 0.0005