Architecture FET / CMOS Input, Voltage FB Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 GBW (typ) (MHz) 50 BW at Acl (MHz) 2.5 Acl, min spec gain (V/V) 6 Slew rate (typ) (V/µs) 24 Vn at flatband (typ) (nV√Hz) 3.8 Vn at 1 kHz (typ) (nV√Hz) 5.3 Iq per channel (typ) (mA) 0.9 Vos (offset voltage at 25°C) (max) (mV) 0.6 Rail-to-rail In to V-, Out Features Decompensated, Shutdown Rating Catalog Operating temperature range (°C) -40 to 125 CMRR (typ) (dB) 100 Input bias current (max) (pA) 10 Offset drift (typ) (µV/°C) 0.3 Iout (typ) (mA) 20 2nd harmonic (dBc) -105 3rd harmonic (dBc) -95 Frequency of harmonic distortion measurement (MHz) 0.02
Architecture FET / CMOS Input, Voltage FB Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 GBW (typ) (MHz) 50 BW at Acl (MHz) 2.5 Acl, min spec gain (V/V) 6 Slew rate (typ) (V/µs) 24 Vn at flatband (typ) (nV√Hz) 3.8 Vn at 1 kHz (typ) (nV√Hz) 5.3 Iq per channel (typ) (mA) 0.9 Vos (offset voltage at 25°C) (max) (mV) 0.6 Rail-to-rail In to V-, Out Features Decompensated, Shutdown Rating Catalog Operating temperature range (°C) -40 to 125 CMRR (typ) (dB) 100 Input bias current (max) (pA) 10 Offset drift (typ) (µV/°C) 0.3 Iout (typ) (mA) 20 2nd harmonic (dBc) -105 3rd harmonic (dBc) -95 Frequency of harmonic distortion measurement (MHz) 0.02