SLPS512A July 2014 – May 2017 CSD75208W1015
PRODUCTION DATA.
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
パッケージ・オプション
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
メカニカル・データ（パッケージ｜ピン）
- YZC|6
サーマルパッド・メカニカル・データ
発注情報
1 Features
- Dual P-Channel MOSFETs
- Common Source Configuration
- Small Footprint 1 mm × 1.5 mm
- Gate-Source Voltage Clamp
- Gate ESD Protection –3 kV
- Pb Free
- RoHS Compliant
- Halogen Free
2 Applications
- Battery Management
- Load Switch
- Battery Protection
3 Description
This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Top View
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | –20 | V | |
| Qg | Gate Charge Total (–4.5 V) | 1.9 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 0.23 | nC | |
| RDS(on) | Drain-to-Source On-Resistance |
VGS = –1.8 V | 100 | mΩ |
| VGS = –2.5 V | 70 | mΩ | ||
| VGS = –4.5 V | 56 | mΩ | ||
| RD1D2(on) | Drain-to-Drain On-Resistance |
VGS = –1.8 V | 190 | mΩ |
| VGS = –2.5 V | 120 | mΩ | ||
| VGS = –4.5 V | 90 | mΩ | ||
| VGS(th) | Threshold Voltage | –0.8 | V | |
Ordering Information(1)
| Device | Qty | Media | Package | Ship |
|---|---|---|---|---|
| CSD75208W1015 | 3000 | 7-Inch Reel | 1.0 mm × 1.5 mm Wafer Level Package | Tape and Reel |
| CSD75208W1015T | 250 | 7-Inch Reel |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | –20 | V |
| VGS | Gate-to-Source Voltage | –6 | V |
| ID1D2 | Continuous Drain-to-Drain Current, TC = 25°C |
–1.6 | A |
| Pulsed Drain-to-Drain Current, TC = 25°C(1) |
–22 | A | |
| IS | Continuous Source Pin Current | –3 | A |
| Pulsed Source Pin Current(1) (2) | –39 | A | |
| IG | Continuous Gate Clamp Current | –0.5 | A |
| Pulsed Gate Clamp Current(1) | –7 | A | |
| PD | Power Dissipation | 0.75 | W |
| TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
- Max RθJA = 165ºC/W, pulse duration ≤100 μs, duty cycle ≤1%
- Both devices in parallel
RD1D2(on) vs VGS |
RDS(on) vs VGS |