SLPS496A July 2014 – May 2017 CSD16570Q5B
PRODUCTION DATA.
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
パッケージ・オプション
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
メカニカル・データ（パッケージ｜ピン）
- DNK|8
サーマルパッド・メカニカル・データ
発注情報
1 Features
- Extremely Low Resistance
- Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
2 Applications
- ORing and Hot Swap Applications
3 Description
This 25 V, 0.49 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not designed for switching applications.
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Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V | |
| Qg | Gate Charge Total (4.5 V) | 95 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 31 | nC | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 0.68 | mΩ |
| VGS = 10 V | 0.49 | mΩ | ||
| VGS(th) | Threshold Voltage | 1.5 | V | |
Ordering Information(1)
| Device | Qty | Media | Package | Ship |
|---|---|---|---|---|
| CSD16570Q5B | 2500 | 13-Inch Reel | SON 5 × 6 mm Plastic Package | Tape and Reel |
| CSD16570Q5BT | 250 | 7-Inch Reel |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (Package limited) | 100 | A |
| Continuous Drain Current (Silicon limited), TC = 25°C | 456 | ||
| Continuous Drain Current(1) | 59 | ||
| IDM | Pulsed Drain Current(2) | 400 | A |
| PD | Power Dissipation(1) | 3.2 | W |
| Power Dissipation, TC = 25°C | 195 | ||
| TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
| EAS | Avalanche Energy, single pulse ID = 98 A, L = 0.1 mH, RG = 25 Ω |
480 | mJ |
- Typical RθJA = 40°C/W on a 1-inch2 , 2-oz. Cu pad on a
0.06-inch thick FR4 PCB. - Max RθJC = 0.8°C/W, Pulse duration ≤ 100 μs, duty cycle ≤1%
RDS(on) vs VGS |
Gate Charge |