CSD88539ND
- Ultra-Low Q g and Q gd
- Avalanche Rated
- Pb Free
- RoHS Compliant
- Halogen Free
This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low-current motor control applications.
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Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | CSD88539ND Dual 60 V N-ChannelNexFETPower MOSFETs datasheet (Rev. A) | PDF | HTML | 07 Dec 2023 |
Application note | MOSFET Support and Training Tools (Rev. F) | PDF | HTML | 14 Jun 2024 | |
Application note | Semiconductor and IC Package Thermal Metrics (Rev. D) | PDF | HTML | 25 Mar 2024 | |
Application note | Using MOSFET Transient Thermal Impedance Curves In Your Design | PDF | HTML | 18 Dec 2023 | |
Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | 13 Mar 2023 | |
Application brief | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | 31 May 2022 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
CSD88539ND TINA-TI Reference Design
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Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
SOIC (D) | 8 | Ultra Librarian |
Ordering & quality
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