Low input capacitance: 24 pF at V DS = 5 V
High gate-to-drain and gate-to-source breakdown voltage: –40 V
High transconductance: 68 mS
Packages: Small SC70 and SOT-23
The JFE150 is a Burr-Brown™ discrete JFET built using Texas Instruments’ modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50 µA to 20 mA. When biased at 5 mA, the device yields 0.8 nV/√ Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1 TΩ). The JFE150 also features integrated diodes connected to separate clamp nodes to provide protection without the addition of high-leakage, nonlinear, external diodes.
The JFE150 can withstand a high drain-to-source voltage of 40 V, as well as gate-to-source and gate-to-drain voltages down to –40 V. The temperature range is specified from –40°C to +125°C. The device is offered in 5-pin SOT-23 and SC70 packages.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET datasheet (Rev. B) | PDF | HTML | 25 Apr 2023 |
| Certificate | JFE150EVM EU RoHS Declaration of Conformity (DoC) | 28 Feb 2022 | ||
| User guide | JFE150EVM User's Guide | PDF | HTML | 25 Feb 2022 | |
| Application note | JFE150 Ultra-Low-Noise Pre-Amp | PDF | HTML | 06 Oct 2021 |
For additional terms or required resources, click any title below to view the detail page where available.
Speed up your op amp prototyping and testing with the DIP adapter evaluation module (DIP-ADAPTER-EVM), which provides a fast, easy and inexpensive way to interface with small surface-mount ICs. You can connect any supported op amp using the included Samtec terminal strips or wire them (...)
The JFE150 evaluation module (EVM) is intended to provide basic functional evaluation of the JFE150. The EVM is configured in a closed-loop preamplifier configuration providing 60 dB of gain on a single 12-V supply. User modifications can be made for a variety of circuit configurations.
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| SOT-23 (DBV) | 5 | Ultra Librarian |
| SOT-SC70 (DCK) | 5 | Ultra Librarian |
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
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