Home Power management Power stages Gallium nitride (GaN) power stages
Home
Power management
Power stages
Gallium nitride (GaN) power stages
NEW

LMG3622

ACTIVE

650V 120mΩ GaN FET with integrated driver, protection and current sensing

Order now
Data sheet

LMG3622

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 650 RDS(on) (mΩ) 120 ID (max) (A) 8.5 Features Bottom-side cooled, Current sense, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, USB C/PD compatible, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 120 ID (max) (A) 8.5 Features Bottom-side cooled, Current sense, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, USB C/PD compatible, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (REQ) 38 42.4 mm² 8 x 5.3
  • 650-V 120-mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high bandwidth and high accuracy
  • Cycle-by-cycle overcurrent protection
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 240 µA
  • AUX standby quiescent current: 50 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 8 mm × 5.3 mm QFN package with thermal pad
  • 650-V 120-mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high bandwidth and high accuracy
  • Cycle-by-cycle overcurrent protection
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 240 µA
  • AUX standby quiescent current: 50 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 8 mm × 5.3 mm QFN package with thermal pad

The LMG3622 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3622 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional currentsense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The LMG3622 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the opendrain FLT pin.

The LMG3622 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3622 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional currentsense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The LMG3622 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the opendrain FLT pin.
filter Find other Gallium nitride (GaN) power stages
Download View video with transcript Video

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 5
Type Title Date
* Data sheet LMG3622650-V120-mΩ GaN FET With Integrated Driverand Current-Sense Emulation datasheet (Rev. A) PDF | HTML 14 Nov 2023
Technical article The benefits of low-power GaN in common AC/DC power topologies PDF | HTML 30 Jan 2024
Application brief Maximize System Efficiency With Integrated Current Sensing From TI GaN PDF | HTML 30 Nov 2023
Product overview Designing With the LMG362x Family of Low-Power GaN FETs PDF | HTML 28 Nov 2023
Certificate LMG3622EVM-082 EU Declaration of Conformity (DoC) 21 Aug 2023

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG3622EVM-082 — LMG3622 evaluation module for 65-W quasi-resonant flyback converter with USB Type-C® PD

LMG3622EVM-082 demonstrates high efficiency and high density for a 65-W USB Type-C® Power Delivery (PD) off-line adapter using the LMG3622 integrated GaN FET with current sense emulation.  The input supports a universal 90 VAC to 265 VAC and the single output can be set to 5 V, 9 V and 15 V all at (...)

User guide: PDF | HTML
Not available on TI.com
Calculation tool

LMG36XX-CALC — LMG36XX Quasi-Resonant Flyback Power Stage Design Calculator

The purpose of this tool is to aid in the design of the main power stage components of a Quasi-Resonant Flyback Converter (QR) with the use LMG36XX integrated GaN FET. Calculations are provided for frequency, voltage/current stresses, and losses in converter.
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG3612 — 650-V 120-mΩ GaN FET with integrated driver and protection LMG3616 — 650-V 270-mΩ GaN FET with integrated driver and protection LMG3622 — 650V 120mΩ GaN FET with integrated driver, protection and current sensing LMG3624 — 650V 170mΩ GaN FET with integrated driver, protection and current sensing LMG3626 — 650V 270mΩ GaN FET with integrated driver, protection and current sensing
Download
Reference designs

TIDA-050074 — 140-W GaN-based USB PD3.1 USB-C® adapter reference design

This reference design is a gallium nitride (GaN) based, 140W AC-DC power with high effciency and power density. It supports wide input (90VAC to 264VAC) and output (5V to 28V) voltages. It is designed for the application, such as the adaptor design for USB PD3.1 and the charger for power tools.
Design guide: PDF
Reference designs

PMP41037 — 1kW, 800V to 12V serial half-bridge bidirectional DCX with GaN and C2000 Reference Design

This reference design is a 1kW bidirectional DC transformer (DCX), converting 800V DC bus into 12V with isolation. The design is controlled by F280039C and constantly operated at the resonant frequency of the resonant tank. The primary side uses LMG3622 GaN serial half bridge to handle up to 900V (...)
Test report: PDF
Package Pins CAD symbols, footprints & 3D models
VQFN (REQ) 38 Ultra Librarian
TI's Standard Terms and Conditions for Evaluation Items apply.

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Support & training

TI E2E™ forums with technical support from TI engineers

View all forum topics

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos