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The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | SM72482 Dual 5A Compound Gate Driver datasheet (Rev. C) | 01 Apr 2013 | |
| Application note | Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs | PDF | HTML | 22 Jan 2024 | |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 28 Feb 2020 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 28 Feb 2020 | ||
| Application brief | How to overcome negative voltage transients on low-side gate drivers' inputs | 18 Jan 2019 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 29 Oct 2018 |
For additional terms or required resources, click any title below to view the detail page where available.
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
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