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Noninverting buffers & drivers

SN74AUP1G17-EP

ACTIVE

Enhanced product single 0.8-V to 3.6-V low power buffer with Schmitt-Trigger inputs

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Data sheet

SN74AUP1G17-EP

ACTIVE
Data sheet Order now

Product details

Technology family AUP Supply voltage (min) (V) 0.8 Supply voltage (max) (V) 3.6 Number of channels 1 IOL (max) (mA) 4 Supply current (max) (µA) 0.9 IOH (max) (mA) -4 Input type Schmitt-Trigger Output type Push-Pull Features Balanced outputs, Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns) Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
Technology family AUP Supply voltage (min) (V) 0.8 Supply voltage (max) (V) 3.6 Number of channels 1 IOL (max) (mA) 4 Supply current (max) (µA) 0.9 IOH (max) (mA) -4 Input type Schmitt-Trigger Output type Push-Pull Features Balanced outputs, Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns) Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
SOT-SC70 (DCK) 5 4.2 mm² 2 x 2.1
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages
  • Low Static-Power Consumption (ICC = 0.9 µA Max)
  • Low Dynamic-Power Consumption (Cpd = 4.4 pF Typ at 3.3 V)
  • Low Input Capacitance (CI = 1.5 pF)
  • Low Noise — Overshoot and Undershoot <10% of VCC
  • Ioff Supports Partial-Power-Down Mode Operation
  • Includes Schmitt-Trigger Inputs
  • Wide Operating VCC Range of 0.8 V to 3.6 V
  • Optimized for 3.3-V Operation
  • 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
  • tpd = 5.1 ns Max at 3.3 V
  • Suitable for Point-to-Point Applications
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)
  • ESD Protection Exceeds 5000 V With Human-Body Model

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

NanoStar, NanoFree are trademarks of Texas Instruments.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages
  • Low Static-Power Consumption (ICC = 0.9 µA Max)
  • Low Dynamic-Power Consumption (Cpd = 4.4 pF Typ at 3.3 V)
  • Low Input Capacitance (CI = 1.5 pF)
  • Low Noise — Overshoot and Undershoot <10% of VCC
  • Ioff Supports Partial-Power-Down Mode Operation
  • Includes Schmitt-Trigger Inputs
  • Wide Operating VCC Range of 0.8 V to 3.6 V
  • Optimized for 3.3-V Operation
  • 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
  • tpd = 5.1 ns Max at 3.3 V
  • Suitable for Point-to-Point Applications
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)
  • ESD Protection Exceeds 5000 V With Human-Body Model

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

NanoStar, NanoFree are trademarks of Texas Instruments.

The AUP family is TI's premier solution to the industry's low-power needs in battery-powered portable applications. This family ensures a very low static- and dynamic-power consumption across the entire VCC range of 0.8 V to 3.6 V, resulting in an increased battery life. This product also maintains excellent signal integrity.

This device functions as an independent gate with Schmitt-trigger inputs, which allows for slow input transition and better switching noise immunity at the input.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

The AUP family is TI's premier solution to the industry's low-power needs in battery-powered portable applications. This family ensures a very low static- and dynamic-power consumption across the entire VCC range of 0.8 V to 3.6 V, resulting in an increased battery life. This product also maintains excellent signal integrity.

This device functions as an independent gate with Schmitt-trigger inputs, which allows for slow input transition and better switching noise immunity at the input.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
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Type Title Date
* Data sheet SN74AUP1G17-EP datasheet 31 Jan 2007
* VID SN74AUP1G17-EP VID V6207623 21 Jun 2016
* Radiation & reliability report SN74AUP1G17MDCKREP Reliabilty Report 09 Feb 2016
Application brief Understanding Schmitt Triggers (Rev. A) PDF | HTML 22 May 2019
Selection guide Little Logic Guide 2018 (Rev. G) 06 Jul 2018
Selection guide Logic Guide (Rev. AB) 12 Jun 2017
Application note How to Select Little Logic (Rev. A) 26 Jul 2016
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004

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