Design tool
UCC21710
5.7kVrms ±10A, single-channel-isolated gate driver with OC detection, internal clamp for IGBT/SiC
Data sheet
UCC21710
- 5.7-kV RMS single channel isolated gate driver
- Drives SiC MOSFETs and IGBTs up to 2121V pk
- 33-V maximum output drive voltage (VDD-VEE)
- ±10-A drive strength and split output
- 150-V/ns minimum CMTI
- 4-A internal active Miller clamp
- 400-mA soft turn-off under fault condition
- Isolated analog sensor with PWM output for
- Temperature sensing with NTC, PTC or thermal diode
- High voltage DC-Link or phase voltage
- Alarm FLT on over current and reset from RST/EN
- Fast enable/disable response on RST/EN
- Rejects <40-ns noise transient and pulses on input pins
- 12-V VDD UVLO with power good on RDY
- Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
- 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
- SOIC-16 DW package with creepage and clearance distance > 8 mm
- Operating junction temperature –40°C to 150°C
- Safety-related certifications:
- Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
- UL 1577 component recognition program
The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage with longer than 40 years isolation barrier life, 12.8-kV PK surge immunity, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).
The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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Technical documentation
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Evaluation board
UCC21710QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules
The UCC21710QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)
User guide: PDF
Evaluation board
UCC21710QDWEVM-054 — UCC21710 evaluation module for Wolfspeed® 1200-V SiC platforms
The UCC21710QDWEVM-054 is a compact half-bridge gate driver evaluation module consisting of two single-channel isolated gate drivers. This evaluation module provides supply voltage, drive, protection and monitoring needed for driving several different models (...)
User guide: PDF
Simulation tool
PSPICE-FOR-TI — PSpice® for TI design and simulation tool
PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs
TIDA-01606 — 10-kW, bidirectional three-phase three-level (T-type) inverter and PFC reference design
This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC T-type inverter stage. Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching (...)
Reference designs
PMP23223 — Smart isolated gate driver with bias supply reference design
This reference design demonstrates the combination of UCC21732 gate driver with a UCC14xxx series bias supply. This design can be used to drive a variety of power switches, including connecting directly to a Wolfspeed Silicon Carbide (SiC) field-effect transistor (FET) module. This reference design (...)
Test report: PDF
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| SOIC (DW) | 16 | Ultra Librarian |
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