SN74CBT3253C
- SN74CBT3253C Functionally Identical to Industry-Standard ’3253 Function
- Undershoot Protection for Off-Isolation on A and B Ports up to -2 V
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low ON-State Resistance (ron) Characteristics (ron = 3
Typical)
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 3 µA Max)
- VCC Operating Range From 4 V to 5.5 V
- Data I/Os Support 0 to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
- Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports I2C Bus Expansion
- Supports Both Digital and Analog Applications: USB Interface, Bus Isolation, Low-Distortion Signal Gating
The SN74CBT3253C is a high-speed TTL-compatible FET multiplexer/demultiplexer with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3253C provides protection for undershoot up to -2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.
The SN74CBT3253C is organized as two 1-of-4 multiplexer/demultiplexers with separate output-enable (1OE, 2OE) inputs. The select (S0, S1) inputs control the data path of each multiplexer/demultiplexer. When OE is low, the associated multiplexer/demultiplexer is enabled, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated multiplexer/demultiplexer is disabled, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
技术文档
设计和开发
如需其他信息或资源,请点击以下任一标题进入详情页面查看(如有)。
LEADED-ADAPTER1 — 用于快速测试 TI 5、8、10、16 和 24 引脚引线式封装的表面贴装转 DIP 接头适配器
EVM-LEADED1 板可对 TI 的常见引线式封装进行快速测试和电路板试验。该评估板具有足够的空间,可将 TI 的 D、DBQ、DCT、DCU、DDF、DGS、DGV 和 PW 表面贴装封装转换为 100mil DIP 接头。
LEADLESS-ADAPTER1 — 用于测试 TI 6、8、10、12、14、16 和 20 引脚无引线封装的表面贴装转 DIP 接头适配器
封装 | 引脚 | CAD 符号、封装和 3D 模型 |
---|---|---|
SOIC (D) | 16 | Ultra Librarian |
SSOP (DB) | 16 | Ultra Librarian |
SSOP (DBQ) | 16 | Ultra Librarian |
TSSOP (PW) | 16 | Ultra Librarian |
VQFN (RGY) | 16 | Ultra Librarian |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点
推荐米6体育平台手机版_好二三四可能包含与 TI 此米6体育平台手机版_好二三四相关的参数、评估模块或参考设计。