米6体育平台手机版_好二三四详情

Continuous current (max) (A) 82 Sensitivity (typ) (mV/mT) 25, 33, 50, 75, 100, 150 Input offset current (±) (max) (mA) 130, 150, 160, 180, 200 Input offset current drift (±) (typ) (µA/°C) 867, 1150, 1300, 1400, 1800, 2000 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (kHz) 1000 Sensitivity error (%) 0.4 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Automotive Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
Continuous current (max) (A) 82 Sensitivity (typ) (mV/mT) 25, 33, 50, 75, 100, 150 Input offset current (±) (max) (mA) 130, 150, 160, 180, 200 Input offset current drift (±) (typ) (µA/°C) 867, 1150, 1300, 1400, 1800, 2000 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (kHz) 1000 Sensitivity error (%) 0.4 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Automotive Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
SOIC (DVG) 10 106.09 mm² 10.3 x 10.3
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C to 125°C, TA
  • Functional Safety-Capable
    • Documentation available to aid functional safety system design
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±10µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Fast Response
    • Signal bandwidth: 1MHz
    • Response time: 120ns
    • Propagation delay: 50ns
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 20mV/A to 150mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C to 125°C, TA
  • Functional Safety-Capable
    • Documentation available to aid functional safety system design
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±10µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Fast Response
    • Signal bandwidth: 1MHz
    • Response time: 120ns
    • Propagation delay: 50ns
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 20mV/A to 150mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1

The TMCS1133-Q1 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

The TMCS1133-Q1 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

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类型 标题 下载最新的英语版本 日期
* 数据表 TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage , Overcurrent Detection and Ambient Field Rejection 数据表 PDF | HTML 2024年 7月 22日
证书 TMCS1133AEVM EU Declaration of Conformity (DoC) 2023年 8月 21日
证书 TMCS1133BEVM EU Declaration of Conformity (DoC) 2023年 8月 21日
证书 TMCS1133CEVM EU Declaration of Conformity (DoC) 2023年 8月 21日

设计和开发

如需其他信息或资源,请点击以下任一标题进入详情页面查看(如有)。

评估板

TMCS-A-ADAPTER-EVM — 适用于 DVG、DVF 或 DZP 封装的 TMCS 隔离式霍尔效应电流传感器适配器卡(不包括 IC)

TMCS-A-ADAPTER-EVM 评估模块 (EVM) 旨在促进快速、方便地使用具有 DVG、DVF 或 DZP 封装的 TMCS 隔离式霍尔效应精密电流检测监控器。此 EVM 支持用户通过霍尔输入侧推送高达 90A 的电流,同时通过隔离栅测量隔离式输出。TMCS-A-ADAPTER-EVM 只有一个未组装的 PCB,预留了用于组装测试点的位置和用于器件评估的分线接头引脚。PCB 焊盘采用重叠结构,因此任何 DVG、DVF 或 DZP TMCS 器件都能与 TMCS-A-ADAPTER-EVM 配合使用。

用户指南: PDF | HTML
英语版: PDF | HTML
TI.com 上无现货
评估板

TMCS1133EVM — TMCS1133 评估模块

TMCS1133EVM 评估模块 (EVM) 工具旨在实现 TMCS1133 的快速便捷应用,TMCS1133 是一款采用内部基准的隔离式霍尔效应精密电流检测监测器。此 EVM 支持用户在霍尔输入侧提供最大工作电流,同时通过增强型隔离栅测量隔离式输出。此固定装置布局并非作为目标电路的模型使用,也不针对电磁 (EMI) 测试进行布局。该 EVM 由单个印刷电路板 (PCB) 构成,可拆分为五个单独部分,支持用户测试单个静态点的所有灵敏度变化(A = 2.5V、B = 1.65V 或 C = 0.33V)。

用户指南: PDF | HTML
英语版: PDF | HTML
参考设计

PMP41078 — 采用 GaN HEMT 的高压转低压直流/直流转换器参考设计

此参考设计介绍了一款采用 650V 氮化镓 (GaN) 高电子迁移率晶体管 (HEMT)的 3.5kW 高压转低压直流/直流转换器。采用 LMG3522R030 作为初级开关可使该转换器在高开关频率下工作。在此设计中,转换器使用了尺寸更小的变压器。为了轻松满足有源钳位金属氧化物半导体场效应晶体管 (MOSFET) 的热性能要求,转换器使用了双通道有源钳位电路。
测试报告: PDF
封装 引脚 CAD 符号、封装和 3D 模型
SOIC (DVG) 10 Ultra Librarian

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

支持和培训

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