LMG342X-BB-EVM

LMG342x evaluation module

LMG342X-BB-EVM

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Overview

The LMG342X-BB-EVM is an easy-to-use breakout board to configure any LMG342xR0x0 half-bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry, this evaluation module (EVM) allows for quick measurements of the gallium nitride (GaN) device switching. This EVM is capable of delivering up to 12A of output current with adequate thermal management (forced air, low frequency operation, etc) to ensure the maximum operating temperature is not exceeded. This EVM is not suitable for transient measurements since it is an open loop board.

Only a single pulse width modulated input is required, with complementary pulse width modulated signals and corresponding dead time generated on board. Probe points are provided to allow for key logic and power stage waveforms to be measured with oscilloscope probes that have short ground springs.

Features
  • Input voltage operates up to 650V
  • Simple open loop design to evaluate performance of LMG342XR0XX, LMG352XR0XX
  • Single or dual PWM input onboard for PWM signal with variable dead time
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Gallium nitride (GaN) power stages
LMG3422R030 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3426R030 600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3426R050 600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3522R030-Q1 Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R050 650-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3526R050 650-V 50-mΩ GaN FET with integrated driver, protection and zero-voltage detection reporting
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  1. Order the LMG342x GaN system-level evaluation motherboard for LMG342x Family and the desired daughter card
  2. Read the LMG342XEVM-04X User's Guide

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Evaluation board

LMG342X-BB-EVM — LMG342x evaluation motherboard

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Daughter card

LMG3422EVM-043 — LMG3422R030 600-V 30-mΩ half-bridge daughter card

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Daughter card

LMG3422EVM-041 — LMG3422R050 600-V 50-mΩ half-bridge daughter card

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Daughter card

LMG3522EVM-042 — LMG3522R030-Q1 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card

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Daughter card

LMG3425EVM-043 — LMG3425R030 600-V 30-mΩ with ideal diode mode half-bridge daughter card

Daughter card

LMG3425EVM-041 — LMG3425R050 600-V 50-mΩ with ideal diode mode half-bridge daughter card

TI's Standard Terms and Conditions for Evaluation Items apply.

Technical documentation

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Type Title Date
User guide LMG342XEVM-04X User Guide (Rev. B) PDF | HTML 30 Jan 2022
Certificate LMG342X-BB-EVM EU Declaration of Conformity (DoC) 27 Oct 2020

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