ZHCSJR5 May   2019 TMUX1219

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      应用示例
      2.      方框图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5 V ±10 %)
    6. 6.6 Electrical Characteristics (VDD = 3.3 V ±10 %)
    7. 6.7 Electrical Characteristics (VDD = 1.8 V ±10 %)
    8. 6.8 Electrical Characteristics (VDD = 1.2 V ±10 %)
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 On-Resistance
    2. 7.2 Off-Leakage Current
    3. 7.3 On-Leakage Current
    4. 7.4 Transition Time
    5. 7.5 Break-Before-Make
    6. 7.6 Charge Injection
    7. 7.7 Off Isolation
    8. 7.8 Crosstalk
    9. 7.9 Bandwidth
  8. 8 Detailed Description
    1. 8.1 Functional Block Diagram
    2. 8.2 Feature Description
      1. 8.2.1 Bidirectional Operation
      2. 8.2.2 Rail to Rail Operation
      3. 8.2.3 1.8 V Logic Compatible Inputs
      4. 8.2.4 Fail-Safe Logic
    3. 8.3 Device Functional Modes
    4. 8.4 Truth Tables
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Switchable Operational Amplifier Gain Setting
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Input Control for Power Amplifier
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Layout Information
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.8 Electrical Characteristics (VDD = 1.2 V ±10 %)

at TA = 25°C, VDD = 1.2 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0 V to VDD
ISD = 10 mA
Refer to On-Resistance 		25°C 70 Ω
–40°C to +85°C 105 Ω
–40°C to +125°C 105 Ω
ΔRON On-resistance matching between channels VS = 0 V to VDD
ISD = 10 mA
Refer to On-Resistance 		25°C 0.4 Ω
–40°C to +85°C 1.5 Ω
–40°C to +125°C 1.5 Ω
IS(OFF) Source off leakage current(1) VDD = 1.32 V
Switch Off
VD = 1 V / 0.8 V
VS = 0.8 V / 1 V
Refer to Off-Leakage Current 		25°C ±5 nA
–40°C to +85°C –25 25 nA
–40°C to +125°C –40 40 nA
ID(ON)
IS(ON) 		Channel on leakage current VDD = 1.32 V
Switch On
VD = VS = 1 V / 0.8 V
Refer to On-Leakage Current 		25°C ±15 nA
–40°C to +85°C –50 50 nA
–40°C to +125°C –80 80 nA
LOGIC INPUTS (SEL)
VIH Input logic high  –40°C to +125°C 0.96 5.5 V
VIL Input logic low –40°C to +125°C 0 0.36 V
IIH
IIL 		Input leakage current 25°C ±0.005   µA
IIH
IIL 		Input leakage current –40°C to +125°C   ±0.05 µA
CIN Logic input capacitance 25°C   1   pF
CIN Logic input capacitance –40°C to +125°C     2 pF
POWER SUPPLY
IDD VDD supply current Logic inputs = 0 V or 5.5 V 25°C 0.003   µA
–40°C to +125°C   0.5 µA
DYNAMIC CHARACTERISTICS
tTRAN Transition time between channels VS = 1 V
RL = 200 Ω, CL = 15 pF
Refer to Transition Time 		25°C   55 ns
–40°C to +85°C   190 ns
–40°C to +125°C     190 ns
tOPEN (BBM) Break before make time VS = 1 V
RL = 200 Ω, CL = 15 pF
Refer to Break-Before-Make 		25°C   28 ns
–40°C to +85°C 1     ns
–40°C to +125°C 1     ns
QC Charge Injection VD = 1 V
RS = 0 Ω, CL = 1 nF
Refer to Charge Injection 		25°C   –2   pC
OISO Off Isolation RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to Off Isolation 		25°C   –65   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to Off Isolation 		25°C   –45   dB
XTALK Crosstalk RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to Crosstalk 		25°C   –65   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to Crosstalk 		25°C   –45   dB
BW Bandwidth RL = 50 Ω, CL = 5 pF 25°C   250   MHz
CSOFF Source off capacitance f = 1 MHz 25°C   7   pF
CSON
CDON 		On capacitance f = 1 MHz 25°C   23   pF
(1) When VS is 1 V, VD is 0.8 V or when VS is 0.8 V, VD is 1 V.
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