ZHCS116G May   2011  – December 2015 TPD4S014

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics, EN, ACK, D+, D-, ID Pins
    6. 6.6 Electrical Characteristics OVP Circuits
    7. 6.7 Supply Current Consumption
    8. 6.8 Thermal Shutdown Feature
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Voltage Protection at VBUS up to 28 V DC
      2. 7.3.2 Low RON nFET Switch
      3. 7.3.3 ESD Performance D+/D-/ID/VBUS Pins
      4. 7.3.4 Overvoltage and Undervoltage Lockout Features
      5. 7.3.5 Capacitance TVS ESD Clamp for USB2.0 Hi-Speed Data Rate
      6. 7.3.6 Start-up Delay
      7. 7.3.7 OVP Glitch Immunity
      8. 7.3.8 Integrated Input Enable and Status Output Signal
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 For Non-OTG USB Systems
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 For OTG USB Systems
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 社区资源
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 修订历史记录

Changes from F Revision (September 2015) to G Revision

  • Added a frequency test condition to capacitance in the Electrical Characteristics table. Go

Changes from E Revision (June 2014) to F Revision

  • Corrected VDROP on nFET under loadGo

Changes from D Revision (April 2014) to E Revision

  • Updated Recommended Operating Conditions table. Go
  • Changed terminal name to ILEAK from ILGo
  • Updated Electrical Characteristics OVP Circuits table.Go
  • Changed tON MAX value from 18 ms to 22ms Go
  • Changed tOFF 8 µs value from MAX to TYP.Go
  • Changed td(OVP) 11 µs value from MAX to TYP.Go
  • Changed tREC MAX value from 9 ms to 10.5 ms. Go
  • Updated Application and Implementation section. Go

Changes from C Revision (December 2011) to D Revision

  • Added ESD Ratings table.Go
  • Added Recommended Operating Conditions table.Go
  • Added Thermal Information table. Go
  • Updated Electrical Characteristics OVP Circuits table.Go

Changes from B Revision (October 2011) to C Revision

  • 已通过更改数据表严格限定了参数，VOP+ 由 5.55V 变更为 5.9V。Go
  • 已更新 说明）。Go

Changes from A Revision (June 2011) to B Revision

  • Changed name of VCC to VBUSOUT throughout the entire document.Go
  • Deleted row from Device Operation table.Go
  • Added Eye Diagrams to Typical Characteristics section.Go
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