ZHCSMR1C october   2019  – september 2021 UCC5870-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Electrical Characteristics
    8. 6.8  SPI Timing Requirements
    9. 6.9  Switching Characteristics
    10. 6.10 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supplies
        1. 7.3.1.1 VCC1
        2. 7.3.1.2 VCC2
        3. 7.3.1.3 VEE2
        4. 7.3.1.4 VREG1
        5. 7.3.1.5 VREG2
        6. 7.3.1.6 VREF
        7. 7.3.1.7 Other Internal Rails
      2. 7.3.2 Driver Stage
      3. 7.3.3 Integrated ADC for Front-End Analog (FEA) Signal Processing
        1. 7.3.3.1 AI* Setup
        2. 7.3.3.2 ADC Setup and Sampling Modes
          1. 7.3.3.2.1 Center Sampling Mode
          2. 7.3.3.2.2 Edge Sampling Mode
          3. 7.3.3.2.3 Hybrid Mode
        3. 7.3.3.3 DOUT Functionality
      4. 7.3.4 Fault and Warning Classification
      5. 7.3.5 Diagnostic Features
        1. 7.3.5.1  Undervoltage Lockout (UVLO) and Overvoltage Lockout (OVLO)
          1. 7.3.5.1.1 Built-In Self Test (BIST)
            1. 7.3.5.1.1.1 Analog Built-In Self Test (ABIST)
            2. 7.3.5.1.1.2 Function BIST
            3. 7.3.5.1.1.3 Clock Monitor
              1. 7.3.5.1.1.3.1 Clock Monitor Built-In Self Test
        2. 7.3.5.2  CLAMP, OUTH, and OUTL Clamping Circuits
        3. 7.3.5.3  Active Miller Clamp
        4. 7.3.5.4  DESAT based Short Circuit Protection (DESAT)
        5. 7.3.5.5  Shunt Resistor based Overcurrent Protection (OCP) and Short Circuit Protection (SCP)
        6. 7.3.5.6  Temperature Monitoring and Protection for the Power Transistors
        7. 7.3.5.7  Active High Voltage Clamping (VCECLP)
        8. 7.3.5.8  Two-Level Turn-Off
        9. 7.3.5.9  Soft Turn-Off (STO)
        10. 7.3.5.10 Thermal Shutdown (TSD) and Temperature Warning (TWN) of Driver IC
        11. 7.3.5.11 Active Short Circuit Support (ASC)
        12. 7.3.5.12 Shoot-Through Protection (STP)
        13. 7.3.5.13 Gate Voltage Monitoring and Status Feedback
        14. 7.3.5.14 VGTH Monitor
        15. 7.3.5.15 Cyclic Redundancy Check (CRC)
          1. 7.3.5.15.1 Calculating CRC
        16. 7.3.5.16 Configuration Data CRC
        17. 7.3.5.17 SPI Transfer Write/Read CRC
          1. 7.3.5.17.1 SDI CRC Check
          2. 7.3.5.17.2 SDO CRC Check
        18. 7.3.5.18 TRIM CRC Check
    4. 7.4 Device Functional Modes
      1. 7.4.1 State 1: RESET
      2. 7.4.2 State 2: Configuration 1
      3. 7.4.3 State 3: Configuration 2
      4. 7.4.4 State 4: Active
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 System Configuration of SPI Communication
          1. 7.5.1.1.1 Independent Slave Configuration
          2. 7.5.1.1.2 Daisy Chain Configuration
          3. 7.5.1.1.3 Address-based Configuration
        2. 7.5.1.2 SPI Data Frame
          1. 7.5.1.2.1 Writing a Register
          2. 7.5.1.2.2 Reading a Register
    6. 7.6 Register Maps
      1. 7.6.1 UCC5870 Registers
  8. 8 Applications and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Power Dissipation Considerations
      2. 8.1.2 Device Addressing
    2. 8.2 Typical Application Using Internal ADC Reference and Power FET Sense Current Monitoring
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VCC1, VCC2, and VEE2 Bypass Capacitors
        2. 8.2.2.2 VREF, VREG1, and VREG2 Bypass Capacitors
        3. 8.2.2.3 Bootstrap Capacitor (VBST)
        4. 8.2.2.4 VCECLP Input
        5. 8.2.2.5 External CLAMP Output
        6. 8.2.2.6 AI* Inputs
        7. 8.2.2.7 OUTH/ OUTL Outputs
        8. 8.2.2.8 nFLT* Outputs
      3. 8.2.3 Application Curves
    3. 8.3 Typical Application Using DESAT Power FET Monitoring
      1. 8.3.1 Detailed Design Procedure
        1. 8.3.1.1 DESAT Input
      2. 8.3.2 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 VCC1 Power Supply
    2. 9.2 VCC2 Power Supply
    3. 9.3 VEE2 Power Supply
    4. 9.4 VREF Supply (Optional)
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Component Placement
      2. 10.1.2 Grounding Considerations
      3. 10.1.3 High-Voltage Considerations
      4. 10.1.4 Thermal Considerations
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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7.3.5.4 DESAT based Short Circuit Protection (DESAT)

DESAT protection prevents the power transistor from damage in case of short circuit faults. The DESAT input monitors the VCEsat (IGBT)/VDSon (MOSFET) through an external resistor and diode network (R1, C1, D1 and D2 in Figure 7-16). The D1 diode protects the driver IC from high voltage when the power transistor is OFF. The resistor, R1, limits the negative voltage applied on the DESAT input during switching transitions. While the power FET is ON, an internal current source, ICHG, forward biases the DESAT diode and dumps into the collector/drain of the external power switch. Under normal conditions, the VCEsat/VDSon is less than a few volts, however, during short circuit faults the VCEsat/VDSon may rise up to the DC bus voltage when the power transistor operates in the linear region. In this situation, the D1 diode is reverse biased, so the internal current source charges the blanking capacitor (C1) Once the voltage on the DESAT input charges up to the selected threshold (VDESATth),the driver output is pulled into the safe state defined by the CFG10[FS_STATE_DESAT_SCP] bit (CFG10), the fault is indicated in the STATUS3[DESAT_FAULT] (STATUS3), and, if unmasked, the NFLT1 output pulls low. The turn-off of the driver output during a DESAT fault is selectable between normal, soft turn-off (STO), or two-level turnoff (2LTO) dictated by the CFG5[2LTOFF_STO_EN] bits (CFG5). See the Section 7.3.5.9and Section 7.3.5.8 for additional details on STO and 2LTO, respectively. The blanking capacitor is fully discharged at the falling edge of the PWM signal using the internal discharge current (IDCHG). In addition to the blanking time, DESAT is deglitched to prevent false triggering during transitions. The deglitch is selectable using the CFG4[DESAT_DEGLITCH] bit (CFG4).

The DESAT threshold is selectable using the CFG5[DESATTH] bits (CFG5), and the DESAT charging current (ICHG) is selectable, using the CFG5[DESAT_CHG_CURR] bits (CFG5), to control the blanking time (tDS_BLK). The discharge current is enabled/disabled using the CFG5[DESAT_DCHG_EN] bit (CFG5). The DESAT protection function is enabled or disabled using the CFG4[DESAT_EN] bit (CFG4). The implementation diagram and timing schemes of DESAT based short circuit protection are presented in Figure 7-16 and Figure 7-17 respectively. See the Section 8.3.1.1section for details on selecting the R1, C1, and D1 values.

GUID-D391750D-2C2D-4BC5-81FB-79D3772B5764-low.png Figure 7-16 Block diagram of implementation of DESAT protection function.
GUID-64F0FCD3-8BF4-4503-BD2A-C7AE96423C1F-low.png Figure 7-17 Timing scheme of implementation of DESAT protection function (safe state is LOW).
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