米6体育平台手机版_好二三四详情

Protocols Analog Audio Configuration 2:1 SPDT Number of channels 2 Bandwidth (MHz) 18.3 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 2.3 Ron (typ) (mΩ) 520 Input/output voltage (min) (V) -3.2 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 0.2 ESD HBM (typ) (kV) 1.5 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -78 ESD CDM (kV) 1.5 Input/output continuous current (max) (mA) 350 CON (typ) (pF) 370 Off isolation (typ) (dB) -70 Ron (max) (mΩ) 1300 Ron channel match (max) (Ω) 0.3 RON flatness (typ) (Ω) 0.076 Turnoff time (disable) (max) (ns) 70 Turnon time (enable) (max) (ns) 120 VIH (min) (V) 1.4 VIL (max) (V) 0.8
Protocols Analog Audio Configuration 2:1 SPDT Number of channels 2 Bandwidth (MHz) 18.3 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 2.3 Ron (typ) (mΩ) 520 Input/output voltage (min) (V) -3.2 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 0.2 ESD HBM (typ) (kV) 1.5 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -78 ESD CDM (kV) 1.5 Input/output continuous current (max) (mA) 350 CON (typ) (pF) 370 Off isolation (typ) (dB) -70 Ron (max) (mΩ) 1300 Ron channel match (max) (Ω) 0.3 RON flatness (typ) (Ω) 0.076 Turnoff time (disable) (max) (ns) 70 Turnon time (enable) (max) (ns) 120 VIH (min) (V) 1.4 VIL (max) (V) 0.8
DSBGA (YZP) 10 2.8125 mm² 2.25 x 1.25 VSON (DRC) 10 9 mm² 3 x 3 VSSOP (DGS) 10 14.7 mm² 3 x 4.9
  • Specified Break-Before-Make Switching
  • Negative Signaling Capability: Maximum Swing from –2.75 V to 2.75 V (VCC = 2.75 V)
  • Internal Shunt Switch Prevents Audible Click-and-Pop When Switching Between Two Sources
  • Low ON-State Resistance (0.65 Ω Typical)
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • 2.3-V to 5.5-V Power Supply (VCC)
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2500-V Human-Body Model
      (A114-B, Class II)
    • 1500-V Charged-Device Model (C101)
    • 200-V Machine Model (A115-A)
  • Specified Break-Before-Make Switching
  • Negative Signaling Capability: Maximum Swing from –2.75 V to 2.75 V (VCC = 2.75 V)
  • Internal Shunt Switch Prevents Audible Click-and-Pop When Switching Between Two Sources
  • Low ON-State Resistance (0.65 Ω Typical)
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • 2.3-V to 5.5-V Power Supply (VCC)
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2500-V Human-Body Model
      (A114-B, Class II)
    • 1500-V Charged-Device Model (C101)
    • 200-V Machine Model (A115-A)

The TS5A22364 is a bidirectional, 2-channel, single-pole double-throw (SPDT) analog switch designed to operate from 2.3 V to 5.5 V. The device features negative signal capability that allows signals below ground to pass through the switch without distortion. Additionally, the TS5A22364 includes an internal shunt switch, which automatically discharges any capacitance at the NC or NO terminals when they are unconnected to COM. This reduces the audible click/pop noise when switching between two sources. The break-before-make feature prevents signal distortion during the transferring of a signal from one path to another. Low ON-state resistance, excellent channel-to-channel ON-state resistance matching, and minimal total harmonic distortion (THD) performance are ideal for audio applications. The 3.00-mm x 3.00-mm DRC package is also available as a nonmagnetic package for medical imaging applications.

The TS5A22364 is a bidirectional, 2-channel, single-pole double-throw (SPDT) analog switch designed to operate from 2.3 V to 5.5 V. The device features negative signal capability that allows signals below ground to pass through the switch without distortion. Additionally, the TS5A22364 includes an internal shunt switch, which automatically discharges any capacitance at the NC or NO terminals when they are unconnected to COM. This reduces the audible click/pop noise when switching between two sources. The break-before-make feature prevents signal distortion during the transferring of a signal from one path to another. Low ON-state resistance, excellent channel-to-channel ON-state resistance matching, and minimal total harmonic distortion (THD) performance are ideal for audio applications. The 3.00-mm x 3.00-mm DRC package is also available as a nonmagnetic package for medical imaging applications.

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类型 标题 下载最新的英语版本 日期
* 数据表 TS5A22364 0.65-Ω Dual SPDT Analog Switches With Negative Signaling Capability 数据表 (Rev. H) PDF | HTML 2017年 6月 21日
应用简报 用于多路复用器和信号开关的 1.8V 逻辑 (Rev. C) PDF | HTML 英语版 (Rev.C) PDF | HTML 2022年 8月 18日
应用手册 选择正确的米6体育平台手机版_好二三四 (TI) 信号开关 (Rev. E) PDF | HTML 英语版 (Rev.E) PDF | HTML 2022年 8月 5日
应用手册 多路复用器和信号开关词汇表 (Rev. B) 英语版 (Rev.B) PDF | HTML 2022年 3月 11日
应用手册 防止模拟开关的额外功耗 英语版 2008年 7月 15日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日

设计和开发

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接口适配器

LEADED-ADAPTER1 — 用于快速测试 TI 5、8、10、16 和 24 引脚引线式封装的表面贴装转 DIP 接头适配器

EVM-LEADED1 板可对 TI 的常见引线式封装进行快速测试和电路板试验。该评估板具有足够的空间,可将 TI 的 D、DBQ、DCT、DCU、DDF、DGS、DGV 和 PW 表面贴装封装转换为 100mil DIP 接头。     

用户指南: PDF
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接口适配器

LEADLESS-ADAPTER1 — 用于测试 TI 6、8、10、12、14、16 和 20 引脚无引线封装的表面贴装转 DIP 接头适配器

EVM-LEADLESS1 板可对 TI 的常见引线式封装进行快速测试和电路板试验。该评估板具有足够的空间,可将 TI 的 DRC、DTP、DQE、RBW、RGY、RSE、RSV、RSW、RTE、RTJ、RUK、RUC、RUG、RUM、RUT 和 YZP 表面贴装封装转换为 100mil DIP 接头。
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仿真模型

TS5A22364 HSpice Model

SCDM123.ZIP (105 KB) - HSpice Model
仿真模型

TS5A22364 IBIS Model

SCDM122.ZIP (67 KB) - IBIS Model
封装 引脚 CAD 符号、封装和 3D 模型
DSBGA (YZP) 10 Ultra Librarian
VSON (DRC) 10 Ultra Librarian
VSSOP (DGS) 10 Ultra Librarian

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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