UCC21739-Q1
Automotive 3kVrms, ±10A single-channel isolated gate driver w/ isolated analog sensing for IGBT/SiC
UCC21739-Q1
- 3kVRMS single channel isolated gate driver
- AEC-Q100 qualified for automotive applications
- Device temperature grade 1: -40°C to +125°C ambient operating temperature range
- Device HBM ESD classification level 3A
- Device CDM ESD classification level C3
- SiC MOSFETs and IGBTs up to 900Vpk
- 33V maximum output drive voltage (VDD-VEE)
- ±10A drive strength and split output
- 150V/ns minimum CMTI
- 270ns response time fast overcurrent protection
- External active miller clamp
- Internal 2-level turn-off when fault happens
- Isolated analog sensor with PWM output for
- Temperature sensing with NTC, PTC or thermal diode
- High voltage DC-Link or phase voltage
- Alarm FLT on over current and reset from RST/EN
- Fast enable/disable response on RST/EN
- Reject <40ns noise transient and pulse on input pins
- 12V VDD UVLO with power good on RDY
- Inputs/outputs with over/under-shoot transient voltage Immunity up to 5V
- 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
- SOIC-16 DW package with creepage and clearance distance > 8mm
- Operating junction temperature –40°C to 150°C
- Safety-related certifications :
- 4242VPK isolation per DIN EN IEC 60747-17 (VDE 0884-17)
The UCC21739-Q1 is a galvanic isolated single channel gate drivers designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21739-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage, 6kVPK surge immunity basic isolation with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21739-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | UCC21739-Q1 Automotive 10A Source/Sink Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. A) | PDF | HTML | 31 Jan 2024 |
Certificate | VDE Certificate for Basic Isolation for DIN EN IEC 60747-17 (Rev. W) | 31 Jan 2024 | ||
User guide | UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC | 01 Sep 2023 | ||
Application brief | The Use and Benefits of Ferrite Beads in Gate Drive Circuits | PDF | HTML | 16 Dec 2021 | |
Design guide | SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing | 18 Dec 2019 |
Design & development
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Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
SOIC (DW) | 16 | Ultra Librarian |
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