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UCC27200-Q1

ACTIVE

Automotive 3-A, 120-V half bridge gate driver with 8-V UVLO and CMOS inputs

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Data sheet

UCC27200-Q1

ACTIVE
Data sheet Order now

Product details

Bootstrap supply voltage (max) (V) 110 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 8 Fall time (ns) 7 Iq (mA) 0.001 Input threshold CMOS Channel input logic CMOS Switch node voltage (V) -5 TI functional safety category Functional Safety-Capable Driver configuration Noninverting
Bootstrap supply voltage (max) (V) 110 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 8 Fall time (ns) 7 Iq (mA) 0.001 Input threshold CMOS Channel input logic CMOS Switch node voltage (V) -5 TI functional safety category Functional Safety-Capable Driver configuration Noninverting
HSOIC (DDA) 8 29.4 mm² 4.9 x 6
  • AEC-Q100 qualified for automotive applications: device temperature grade 1
  • –40°C to +150°C junction temperature range
  • Drives two N-channel MOSFETs in high-side and low-side configuration
  • Maximum boot voltage: 120V
  • Maximum VDD voltage: 20V
  • On-chip 0.65V VF, 0.65Ω RD bootstrap diode
  • 22ns propagation delay times
  • 3A sink, 3A source output currents
  • 8ns rise and 7ns fall time with 1000pF load
  • 1ns delay matching
  • AEC-Q100 qualified for automotive applications: device temperature grade 1
  • –40°C to +150°C junction temperature range
  • Drives two N-channel MOSFETs in high-side and low-side configuration
  • Maximum boot voltage: 120V
  • Maximum VDD voltage: 20V
  • On-chip 0.65V VF, 0.65Ω RD bootstrap diode
  • 22ns propagation delay times
  • 3A sink, 3A source output currents
  • 8ns rise and 7ns fall time with 1000pF load
  • 1ns delay matching

The UCC27200-Q1 high frequency N-channel MOSFET drivers includes a 120V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turnon and turnoff of each other.

An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.

The UCC27200-Q1 has high-noise-immune CMOS input thresholds.

The device is offered in the 8-pin SO PowerPAD™ (DDA) package.

The UCC27200-Q1 high frequency N-channel MOSFET drivers includes a 120V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turnon and turnoff of each other.

An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.

The UCC27200-Q1 has high-noise-immune CMOS input thresholds.

The device is offered in the 8-pin SO PowerPAD™ (DDA) package.
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Type Title Date
* Data sheet UCC27200-Q1 Automotive 120V, 3A/3A Half-Bridge Driver with 8V UVLO datasheet (Rev. D) PDF | HTML 18 Jul 2024
Application note Understanding and comparing peak current capability of gate drivers PDF | HTML 30 Mar 2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018

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