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氮化镓 (GaN) 功率级

LMG3425R030

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具有集成驱动器、保护和温度报告功能以及理想二极管模式的 600V 30mΩ GaN FET

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LMG3425R030

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米6体育平台手机版_好二三四详情

VDS (max) (V) 600 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Ideal diode mode, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 150
VDS (max) (V) 600 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Ideal diode mode, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 150
VQFN (RQZ) 54 144 mm² 12 x 12
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2.2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2.2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses

The LMG3425R030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3425R030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced power management features include digital temperature reporting, fault detection, and ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. Ideal diode mode reduces third-quadrant losses by enabling dead-time control.

The LMG3425R030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3425R030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced power management features include digital temperature reporting, fault detection, and ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. Ideal diode mode reduces third-quadrant losses by enabling dead-time control.
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类型 标题 下载最新的英语版本 日期
* 数据表 LMG3425R030 600 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 数据表 PDF | HTML 2024年 3月 8日

订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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