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TPS2103

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使能端高电平有效、具有补偿温度功能的 2.7V 至 4V、250mΩ、0.5A、1.3Ω、0.1A 电源多路复用器

米6体育平台手机版_好二三四详情

Number of input channels 2 IN1, IN2 input voltage (min) (V) 2.7 IN1, IN2 input voltage (max) (V) 4 IN1 rDS(on) (typ) (mΩ) 250 IN2 rDS(on) (typ) (mΩ) 1300 IN1 output current (max) (A) 0.5 IN2 output current (max) (A) 0.1 Rating Catalog Quiescent current (Iq) (µA) 0.75 Operating temperature range (°C) -40 to 70 FET Internal Imax (A) 0.5 Features Inrush current control, Reverse current blocking Device type Power muxes Function Inrush current control, Reverse current blocking
Number of input channels 2 IN1, IN2 input voltage (min) (V) 2.7 IN1, IN2 input voltage (max) (V) 4 IN1 rDS(on) (typ) (mΩ) 250 IN2 rDS(on) (typ) (mΩ) 1300 IN1 output current (max) (A) 0.5 IN2 output current (max) (A) 0.1 Rating Catalog Quiescent current (Iq) (µA) 0.75 Operating temperature range (°C) -40 to 70 FET Internal Imax (A) 0.5 Features Inrush current control, Reverse current blocking Device type Power muxes Function Inrush current control, Reverse current blocking
SOT-23 (DBV) 5 8.12 mm² 2.9 x 2.8
  • Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow (No Parasitic Diodes)
  • IN1 . . . 250-m, 500-mA N-Channel; 14-uA Supply Current
  • IN2 . . . 1.3-, 100-mA P-Channel; 0.75-uA Supply Current (VAUX Mode)
  • Advanced Switch Control Logic
  • CMOS and TTL Compatible Enable Input
  • Controlled Rise, Fall, and Transition Times
  • 2.7 V to 4 V Operating Range
  • SOT-23-5 and SOIC-8 Package
  • \x9640°C to 70°C Ambient Temperature Range
  • 2-kV Human Body Model, 750-V Charged Device Model, 200-V Machine-Model ESD Protection
  • Typical Applications
    • Notebook and Desktop PCs
    • Cell phone, Palmtops, and PDAs
    • Battery Management
  • Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow (No Parasitic Diodes)
  • IN1 . . . 250-m, 500-mA N-Channel; 14-uA Supply Current
  • IN2 . . . 1.3-, 100-mA P-Channel; 0.75-uA Supply Current (VAUX Mode)
  • Advanced Switch Control Logic
  • CMOS and TTL Compatible Enable Input
  • Controlled Rise, Fall, and Transition Times
  • 2.7 V to 4 V Operating Range
  • SOT-23-5 and SOIC-8 Package
  • \x9640°C to 70°C Ambient Temperature Range
  • 2-kV Human Body Model, 750-V Charged Device Model, 200-V Machine-Model ESD Protection
  • Typical Applications
    • Notebook and Desktop PCs
    • Cell phone, Palmtops, and PDAs
    • Battery Management

The TPS2102 and TPS2103 are dual-input, single-output power switches designed to provide uninterrupted output voltage when transitioning between two independent power supplies. Both devices combine one n-channel (250 m) MOSFET with a single output. The p-channel MOSFET (IN2) is used with auxiliary power supplies that deliver lower current for standby modes. The n-channel MOSFET (IN1) is used with a main power supply that delivers higher current required for normal operation. Low on-resistance makes the n-channel the ideal path for higher main supply current when power-supply regulation and system voltage drops are critical. When using the p-channel MOSFET, quiescent current is reduced to 0.75 uA to decrease the demand on the standby power supply. The MOSFETs in the TPS2102 and TPS2103 do not have the parasitic diodes, typically found in discrete MOSFETs, thereby preventing back-flow current when the switch is off.

The TPS2102 and TPS2103 are dual-input, single-output power switches designed to provide uninterrupted output voltage when transitioning between two independent power supplies. Both devices combine one n-channel (250 m) MOSFET with a single output. The p-channel MOSFET (IN2) is used with auxiliary power supplies that deliver lower current for standby modes. The n-channel MOSFET (IN1) is used with a main power supply that delivers higher current required for normal operation. Low on-resistance makes the n-channel the ideal path for higher main supply current when power-supply regulation and system voltage drops are critical. When using the p-channel MOSFET, quiescent current is reduced to 0.75 uA to decrease the demand on the standby power supply. The MOSFETs in the TPS2102 and TPS2103 do not have the parasitic diodes, typically found in discrete MOSFETs, thereby preventing back-flow current when the switch is off.

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类型 标题 下载最新的英语版本 日期
* 数据表 Vaux Power-Distribution Switches 数据表 (Rev. A) 2000年 4月 26日

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包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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