4 Revision History
Changes from Revision F (January 2020) to Revision G (November 2020)
- Added register 0x27[3] to register mapGo
- Clarified PDB voltage level for t3 and t4 in
Power-Up Sequencing from 90% VPDB to PDB
VIH
Go
- Changed Power-Up Sequencing alternative programming steps
(t3*) to add NCLK resetGo
- Clarified Power-Up Sequencing alternative programming steps
(t3*) to remove delay between I2C commandsGo
Changes from Revision E (September 2018) to Revision F (January 2020)
- Clarified GPO2 description by removing statement about leaving pin open if unused Go
- Added register 0x27[5] to register map Go
- Fixed missing register 0x29 typo Go
- Added maximum power up timing constraint between VDD_n and PDB Go
- Added recommended software programming steps if VDD_n to PDB maximum power up timing
constraint can not be met Go
Changes from Revision D (October 2016) to Revision E (September 2018)
- Added recommendation to ensure GPO2 is low when PDB goes high Go
- Added Power Over Coax supply noise to the recommended operating conditions tableGo
- Clarified PCLK clock frequency range and added external clock input frequency rangeGo
- Added strap pin input current specification for MODE and IDX pins Go
- Updated TJIT1 PCLK input jitter in the external oscillator mode Go
- Added clarification on MODE pin description in PCLK from imager mode Go
- Updated pullup and pulldown resistor to R1 and R2 in MODE pin configuration diagram Go
- Updated the MODE setting values to ratioGo
- Updated pullup and pulldown resistor for IDX to R3 and R4 in the diagramGo
- Updated IDX setting values to ratio Go
- Updated register "TYPE" column per legend Go
- Added type and default value to the reserved register bits that were missing this information Go
- Added that register 0x00[7:1] does not auto update IDX strapped address Go
- Added description for 0x05 bits 1 and 0 (TX_MODE_12b and TX_MODE_10b) Go
- Clarified description on PDB pin usage during power up Go
- Added paragraph to explain setting registers if GPO2 state is not determined when PDB goes high Go
- Added GPO2 to suggested power-up sequencing diagram Go
- Added timing constraint for PDB to GPO2 delay Go
- Revised coax connection diagram to include pulldown resistor for GPO2 Go
- Revised STP connection diagram to include pulldown resistor for GPO2 Go
Changes from Revision C (April 2016) to Revision D (August 2016)
- Added back channel line rate = 5.5 MHz as test condition; also added footnote for clarification between MHz and Mbps distinction.Go
- Removed 'ns' unit from specifications referencing period in units of T.Go
- Updated test condition specs for jitter bandwidth regarding tJIT0, tJIT1, and tJIT2.Go
- Added input external oscillator frequency range for pin/freq. Go
- Added parameter for typical external oscillator frequency stability.Go
- Added test conditions to tJIND, tJINR, and tJINT.Go
- Added DOUT± as measured output pins for jitter parameters.Go
- Added note (6) for "Serializer output peak-to-peak total jitter includes deterministic jitter, random jitter, and jitter transfer from serializer input". Go
- Added jitter tolerance curve for typical system IJT configuration with DS90UB913A linked to DS90UB914A. Go
- Added device functional mode table for external oscillator operation with example XCLKIN = 48MHz. Go
Changes from Revision B (December 2014) to Revision C (March 2016)
- 已将文档拆分为两个独立文档(器件 DS90UB913A-Q1 和 DS90UB914A-Q1)。Go
- 修改了汽车类特性Go
- Updated pin description for DIN to include active/inactive outputs corresponding to MODE setting.Go
- Added pin description to GPO pins to leave open if unused. Go
- Changed Air Discharge ESD Rating (IEC61000-4-2: RD = 330 Ω, CS = 150 pF) to minimum ±25000 V. Go
- Added RTV text to Thermal Information tableGo
- Added GPO[3:0] typical pin capacitances. Go
- Changed Differential Output Voltage minimum specification. Go
- Changed Single-Ended Output Voltage minimum specification.Go
- Added Back Channel Differential Input Voltage minimum specification.Go
- Added Back Channel Single-Ended Input Voltage minimum specification.Go
- Updated IDDT for VDD_n=1.89V, VDDIO=3.6V, RL=100Ω, Random Pattern with f=100 MHz, 10-bit mode to typical value of 65 mA; value is currently 54 mA.Go
- Updated IDDT for VDD_n=1.89V, VDDIO=3.6V, RL=100Ω, Random Pattern with f=75 MHz, 12-bit high freq mode to typical value of 64 mA; value is currently 54 mA.Go
- Updated IDDT for VDD_n=1.89V, VDDIO=3.6V, RL=100Ω, Random Pattern with f=50 MHz, 12-bit low freq mode to typical value of 63 mA; value is currently 54 mA. Go
- Updated frequency ranges for MODE settings and also revised with correct maximum clock periods. Added footnote and nominal clock period to be in terms of 'T'.
Go
- Deleted Revised jitter freq. test conditions to be > f/20 and also updated typical values for tjit0and tjit2.Go
- Updated VOL Output Low Level row with revised IOL currents and max VOL voltages, dependent upon VDD
IO voltage. Go
- Updated Figure 2 title to state ‘“Worst-Case” Test Pattern for Power Consumption’. Go
- Added footnote that states the following: “UI – Unit Interval is equivalent to one serialized data bit width. The UI scales with PCLK frequency.” Add below calculations to footnote. 12-bit LF mode 1 UI = 1 / ( PCLK_Freq. x 28 ) 12-bit HF mode 1 UI = 1 / ( PCLK_Freq. x 2/3 x 28 ) 10-bit mode 1 UI = 1 / ( PCLK_Freq. /2 x 28 ) Go
- Updated frequency requirements for 10-bit and 12-bit HF modes. 10-bit mode – 50 MHz to 100 MHz; 12-bit HF mode – 37.5 MHz to 75 MHz; 12-bit LF mode (no change) – 25 MHz to 50 MHz. Go
- Updated register 0x01[1] default value to be “0”.Go
- Changed GPO0 Enable for 0x0D[4] to GPO1 Enable.Go
- Added Inject Forward Channel Error Register 0x2D.Go
- Updated power up sequencing information and timing diagram. Go
- Added description specifying that the voltage applied on VDDIO (1.8 V, 3.3 V) or VDD_n (1.8 V) should be at the input pin – any board level DC drop should be compensated. Go
- Added 913A EVM layout example image. Go
Changes from Revision A (June 2013) to Revision B (December 2014)
- 添加了数据表流程和布局,以便符合新的 TI 标准。添加了以下部分:器件比较表;处理额定值;应用和实施;电源建议;布局;器件和文档支持;机械、封装和可订购信息Go
- Added additional thermal characteristics.Go
- Changed typo in Vout test condition from RL=500Ω to RL=50Ω. Go
- Changed
Figure 6-6
to use VODp-p and to clarify difference between STP and CoaxGo
- Added Internal Oscillator section to Device Functional ModesGo
- Added reference to Power over Coax Application reportGo
- Added power up sequencing information and timing diagram.Go