LM5110
- Independently Drives Two N-Channel MOSFETs
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 5A sink/3A Source Current Capability
- Two Channels can be Connected in Parallel to Double the Drive Current
- Independent Inputs (TTL Compatible)
- Fast Propagation Times (25-ns Typical)
- Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
- Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
- Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
- Available in Dual Noninverting, Dual Inverting and Combination Configurations
- Shutdown Input Provides Low Power Mode
- Supply Rail Undervoltage Lockout Protection
- Pin-Out Compatible With Industry Standard Gate Drivers
- Packages:
- SOIC-8
- WSON-10 (4 mm × 4 mm)
The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.
技术文档
| 类型 | 标题 | 下载最新的英语版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 数据表 | LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 数据表 (Rev. B) | PDF | HTML | 2012年 11月 5日 | ||
| 应用简报 | 了解峰值源电流和灌电流 (Rev. A) | 英语版 (Rev.A) | 2020年 4月 29日 | |||
| 应用简报 | 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) | 英语版 (Rev.A) | 2020年 4月 29日 | |||
| 应用简报 | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019年 1月 18日 | ||||
| 更多文献资料 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 | ||||
| 选择指南 | 电源管理指南 2018 (Rev. K) | 2018年 7月 31日 | ||||
| 选择指南 | 电源管理指南 2018 (Rev. R) | 2018年 6月 25日 | ||||
| 更多文献资料 | MOSFET 和 IGBT 栅极驱动器电路的基本原理 | 最新英语版本 (Rev.A) | 2018年 4月 17日 |
设计和开发
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UCC27423-4-5-Q1EVM — 具有使能端的 UCC2742xQ1 双路 4A 高速低侧 MOSFET 驱动器评估模块 (EVM)
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| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
| WSON (DPR) | 10 | Ultra Librarian |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点
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