UC3706
- Dual, 1.5A Totem Pole Outputs
- 40nsec Rise and Fall into 1000pF
- Parallel or Push-Pull Operation
- Single-Ended to Push-Pull Conversion
- High-Speed, Power MOSFET Compatible
- Low Cross-Conduction Current Spike
- Analog, Latched Shutdown
- Internal Deadband Inhibit Circuit
- Low Quiescent Current
- 5 to 40V Operation
- Thermal Shutdown Protection
- 16-Pin Dual-In-Line Package
- 20-Pin Surface Mount Package
The UC1706 family of output drivers are made with a high-speed Schottky process to interface between low-level control functions and high-power switching devices - particularly power MOSFET's. These devices implement three generalized functions as outlined below.
First: They accept a single-ended, low-current digital input of either polarity and process it to activate a pair of high-current, totem pole outputs which can source or sink up to 1.5A each.
Second: They provide an optional single-ended to push-pull conversion through the use of an internal flip-flop driven by double-pulse-suppression logic. With the flip-flop disabled, the outputs work in parallel for 3.0A capability.
Third: Protection functions are also included for pulse-by-pulse current limiting, automatic deadband control, and thermal shutdown.
These devices are available in a two-watt plastic "bat-wing" DIP for operation over a 0°C to 70°C temperature range and, with reduced power, in a hermetically sealed cerdip for -55°C to +125°C operation. Also available in surface mount Q and L packages.
技术文档
类型 | 标题 | 下载最新的英语版本 | 日期 | |||
---|---|---|---|---|---|---|
* | 数据表 | Dual Output Driver 数据表 (Rev. A) | 2001年 5月 2日 | |||
应用简报 | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019年 1月 18日 | ||||
更多文献资料 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 | ||||
更多文献资料 | MOSFET 和 IGBT 栅极驱动器电路的基本原理 | 最新英语版本 (Rev.A) | 2018年 4月 17日 | |||
应用手册 | U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics | 1999年 9月 5日 | ||||
应用手册 | U-137 Practical Considerations in High Performance MOSFET, IGBT and MCT Gate | 1999年 9月 5日 |
设计和开发
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封装 | 引脚 | CAD 符号、封装和 3D 模型 |
---|---|---|
PDIP (N) | 16 | Ultra Librarian |
SOIC (DW) | 16 | Ultra Librarian |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点