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TXS02326A

アクティブ

自動検出機能とスロット専用デュアル LDO 搭載、デュアル電源、2:1 SIM カード・マルチプレクサ / レベル・シフタ

製品詳細

Technology family TXS Applications SIM Card Rating Catalog Operating temperature range (°C) -40 to 85
Technology family TXS Applications SIM Card Rating Catalog Operating temperature range (°C) -40 to 85
VQFN (RGE) 24 16 mm² 4 x 4
  • Level Translator
    • VDDIO Range of 1.7-V to 3.3-V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through I2C Interface
    With Baseband Processor
  • ESD Protection Exceeds JESD 22
    • 2500-V Human-Body Model (A114-B)
    • 6000-V Human-Body Model (A114-B) on VSIM1, SIM1CLK,
      SIM1I/O, SIM1RST, VSIM2, SIM2CLK, SIM2I/O, SIM2RST
    • 1000-V Charged-Device Model (C101)
  • Package
    • 24-Pin QFN (4 mm × 4 mm)

  • Level Translator
    • VDDIO Range of 1.7-V to 3.3-V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through I2C Interface
    With Baseband Processor
  • ESD Protection Exceeds JESD 22
    • 2500-V Human-Body Model (A114-B)
    • 6000-V Human-Body Model (A114-B) on VSIM1, SIM1CLK,
      SIM1I/O, SIM1RST, VSIM2, SIM2CLK, SIM2I/O, SIM2RST
    • 1000-V Charged-Device Model (C101)
  • Package
    • 24-Pin QFN (4 mm × 4 mm)

The TXS02326A is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to support two SIMs/UICCs.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95-V) and Class-C (1.8-V) interfaces; two low-dropout (LDO) voltage regulators with output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces; an integrated "fast-mode" 400 kb/s "slave" I2C control register interface, for configuration purposes; and a 32-kHz clock input, for internal timing generation. The TXS02326A also includes a shutdown input and a comparator input that detects battery pack removal to safely power-down the two SIM cards. The shutdown input and comparator input are equipped with two programmable debounce counter (i.e. BSI input and SDN input) circuits realized by an 8 bit counter.

The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7-V to 3.3-V. VSIM1 and VSIM2 are programmed to either 1.8-V or 2.95-V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3-V to 5.5-V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.

The TXS02326A is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to support two SIMs/UICCs.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95-V) and Class-C (1.8-V) interfaces; two low-dropout (LDO) voltage regulators with output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces; an integrated "fast-mode" 400 kb/s "slave" I2C control register interface, for configuration purposes; and a 32-kHz clock input, for internal timing generation. The TXS02326A also includes a shutdown input and a comparator input that detects battery pack removal to safely power-down the two SIM cards. The shutdown input and comparator input are equipped with two programmable debounce counter (i.e. BSI input and SDN input) circuits realized by an 8 bit counter.

The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7-V to 3.3-V. VSIM1 and VSIM2 are programmed to either 1.8-V or 2.95-V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3-V to 5.5-V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.

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種類 タイトル 最新の英語版をダウンロード 日付
* データシート Dual-Supply 2:1 SIM Card Multiplexer/Translator With Automatic Detection データシート (Rev. A) 2013年 8月 2日
アプリケーション・ノート Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 2024年 7月 12日
アプリケーション・ノート Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024年 7月 3日
セレクション・ガイド Voltage Translation Buying Guide (Rev. A) 2021年 4月 15日

設計および開発

その他のアイテムや必要なリソースを参照するには、以下のタイトルをクリックして詳細ページをご覧ください。

シミュレーション・モデル

TXS02326A IBIS Model

SCEM552.ZIP (144 KB) - IBIS Model
パッケージ ピン数 CAD シンボル、フットプリント、および 3D モデル
VQFN (RGE) 24 Ultra Librarian

購入と品質

記載されている情報:
  • RoHS
  • REACH
  • デバイスのマーキング
  • リード端子の仕上げ / ボールの原材料
  • MSL 定格 / ピーク リフロー
  • MTBF/FIT 推定値
  • 使用原材料
  • 認定試験結果
  • 継続的な信頼性モニタ試験結果
記載されている情報:
  • ファブの拠点
  • 組み立てを実施した拠点

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