TXS4558
- Level Translator
- VCC Range of 1.65 V to 3.3 V
- VBATT Range of 2.3V to 5.5V
- Low-Dropout (LDO) Regulator
- 50-mA LDO Regulator With Enable
- 1.8-V or 2.95-V Selectable Output Voltage
- Very Low Dropout: 100 mV (Max) at 50 mA
- Control and Communication Through GPIO Interface with Baseband Processor
- Isolated Clock Stop Mode for both SIM1 and SIM2 cards
- ESD Protection Exceeds JESD 22
- 2000-V Human-Body Model (A114-B)
- 500-V Charged-Device Model (C101)
- 8kV HBM for SIM pins
- Package
- 20-Pin QFN (3 mm x 3 mm)
The TXS4558 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wire-less baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to be able to support two SIM’s/UICC’s.
The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces. Simple GPIO inputs are used to switch between the two SIM cards and to put it into different modes. The voltage-level translator has two supply voltage pins. VCC sets the reference for the baseband interface and can be operated from 1.65 V to 3.3 V. VSIM1 and VSIM2 are programmed to either 1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.
The TXS4558 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. The device also has 8kV HBM protection for the SIM card pins and standard 2kV HBM protection for all the other pins.
技術資料
種類 | タイトル | 最新の英語版をダウンロード | 日付 | |||
---|---|---|---|---|---|---|
* | データシート | Dual-SIM Card Power Supply with Level Translator & Dedicated Dual LDO データシート (Rev. A) | 2011年 9月 27日 | |||
アプリケーション・ノート | Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators | PDF | HTML | 2024年 7月 12日 | |||
アプリケーション・ノート | Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) | PDF | HTML | 2024年 7月 3日 | |||
セレクション・ガイド | Voltage Translation Buying Guide (Rev. A) | 2021年 4月 15日 | ||||
ユーザー・ガイド | TXS4558EVM | 2011年 9月 22日 |
設計および開発
その他のアイテムや必要なリソースを参照するには、以下のタイトルをクリックして詳細ページをご覧ください。
TXS4558EVM — TXS4558 Evaluation Module
The Texas Instruments TXS4558 Evaluation Module (EVM) is designed to showcase the TXS4558, a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. (...)
パッケージ | ピン数 | CAD シンボル、フットプリント、および 3D モデル |
---|---|---|
WQFN (RUK) | 20 | Ultra Librarian |
購入と品質
- RoHS
- REACH
- デバイスのマーキング
- リード端子の仕上げ / ボールの原材料
- MSL 定格 / ピーク リフロー
- MTBF/FIT 推定値
- 使用原材料
- 認定試験結果
- 継続的な信頼性モニタ試験結果
- ファブの拠点
- 組み立てを実施した拠点