Architecture FET / CMOS Input, Voltage FB Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 GBW (typ) (MHz) 50 BW at Acl (MHz) 50 Acl, min spec gain (V/V) 1 Slew rate (typ) (V/µs) 300 Vn at flatband (typ) (nV√Hz) 5.8 Vn at 1 kHz (typ) (nV√Hz) 5.8 Iq per channel (typ) (mA) 11 Vos (offset voltage at 25°C) (max) (mV) 5.8 Rail-to-rail In to V-, Out Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 CMRR (typ) (dB) 66 Input bias current (max) (pA) 7000000 Offset drift (typ) (µV/°C) 3.13 Iout (typ) (mA) 105 2nd harmonic (dBc) 81 3rd harmonic (dBc) 93 Frequency of harmonic distortion measurement (MHz) 1
Architecture FET / CMOS Input, Voltage FB Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 GBW (typ) (MHz) 50 BW at Acl (MHz) 50 Acl, min spec gain (V/V) 1 Slew rate (typ) (V/µs) 300 Vn at flatband (typ) (nV√Hz) 5.8 Vn at 1 kHz (typ) (nV√Hz) 5.8 Iq per channel (typ) (mA) 11 Vos (offset voltage at 25°C) (max) (mV) 5.8 Rail-to-rail In to V-, Out Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 CMRR (typ) (dB) 66 Input bias current (max) (pA) 7000000 Offset drift (typ) (µV/°C) 3.13 Iout (typ) (mA) 105 2nd harmonic (dBc) 81 3rd harmonic (dBc) 93 Frequency of harmonic distortion measurement (MHz) 1