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LMG3427R030

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具有集成驱动器、保护和零电压检测功能的 600V 30mΩ GaN FET

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LMG3427R030

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米6体育平台手机版_好二三四详情

VDS (max) (V) 600 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 600 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (RQZ) 54 144 mm² 12 x 12
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2.2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
    • LMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2.2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
    • LMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

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* 数据表 LMG342xR030 600 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 数据表 (Rev. F) PDF | HTML 2024年 8月 27日

设计和开发

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子卡

LMG3422EVM-043 — LMG3422R030 600V 30mΩ 半桥子卡

LMG3422EVM-043 将两个 LMG3422R030 GaN FET 配置到具有锁存过流保护功能和所有必要辅助外围电路的半桥中。该 EVM 旨在与大型系统配合使用。
用户指南: PDF | HTML
英语版 (Rev.B): PDF | HTML
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计算工具

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
支持的米6体育平台手机版_好二三四和硬件

支持的米6体育平台手机版_好二三四和硬件

米6体育平台手机版_好二三四
氮化镓 (GaN) 功率级
LMG2100R026 — 100V 2.6mΩ 半桥氮化镓 (GaN) 功率级 LMG2100R044 — 具有集成驱动器和保护功能的 100V 4.4mΩ 半桥 GaN FET LMG2610 — 具有集成驱动器、保护和电流检测功能且适用于 ACF 的 650V 170/248mΩ GaN 半桥 LMG2650 — 具有集成驱动器、保护和电流检测功能的 650V、95mΩ GaN 半桥 LMG3410R050 — 具有集成驱动器和保护功能的 600V 50mΩ GaN LMG3410R070 — 具有集成驱动器和保护功能的 600V 70mΩ GaN LMG3410R150 — 具有集成驱动器和过流保护功能的 600V 150mΩ GaN LMG3411R050 — 具有集成驱动器和逐周期过流保护功能的 600V 50mΩ GaN LMG3411R070 — 具有集成驱动器和逐周期过流保护功能的 600V 70mΩ GaN LMG3411R150 — 具有集成驱动器和逐周期过流保护功能的 600V 150mΩ GaN LMG3422R030 — 具有集成驱动器、保护和温度报告功能的 600V 30mΩ GaN FET LMG3422R050 — 具有集成驱动器、保护和温度报告功能的 600V 50mΩ GaN FET LMG3425R030 — 具有集成驱动器、保护和温度报告功能以及理想二极管模式的 600V 30mΩ GaN FET LMG3425R050 — 具有集成驱动器、保护和温度报告功能以及理想二极管模式的 600V 50mΩ GaN FET LMG3426R030 — 具有集成驱动器、保护和零电压检测功能的 600V 30mΩ GaN FET LMG3426R050 — 具有集成驱动器、保护和零电压检测功能的 600V 50mΩ GaN FET LMG3427R030 — 具有集成驱动器、保护和零电压检测功能的 600V 30mΩ GaN FET LMG3522R030 — 具有集成驱动器、保护和温度报告功能的 650V 30mΩ GaN FET LMG3522R030-Q1 — 具有集成驱动器、保护和温度报告功能的汽车类 650V 30mΩ GaN FET LMG3522R050 — 具有集成驱动器、保护和温度报告功能的 650V 50mΩ GaN FET LMG3526R030 — 具有集成驱动器、保护和零电压检测功能的 650V 30mΩ GaN FET LMG3526R050 — 具有集成驱动器、保护和零电压检测报告功能的 650V 50mΩ GaN FET LMG5200 — 80V GaN 半桥功率级
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订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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